本文選題：光致發(fā)光 + a-SiNx∶O薄膜��； 參考：《南京大學學報(自然科學)》2017年03期

【摘要】：在室溫下利用等離子體增強化學氣相淀積(PECVD)方法制備出非晶摻氧氮化硅(a-SiN_x∶O)薄膜.通過改變硅烷(SiH_4)和氨氣(NH_3)流量比R,可實現(xiàn)薄膜光致發(fā)光(PL)峰位在2.06~2.79eV可見光能量范圍內的波長調制.光吸收譜中光吸收峰位與PL峰位重疊,表明薄膜發(fā)光來源于光吸收邊以下0.65eV左右處的缺陷態(tài).通過對傅里葉變換紅外光譜(FTIR)的鍵濃度分析和X射線光電子能譜(XPS)Si 2p峰的分峰擬合,發(fā)現(xiàn)薄膜PL強度的增強與N-Si-O鍵合濃度的升高緊密相關.R=1∶4時,PL強度與N-Si-O鍵合濃度同時達到最大.進一步證明了a-SiN_x∶O薄膜中的發(fā)光缺陷態(tài)與N-Si-O鍵合結構密切相關.此外,PL峰位隨流量比R的增大而發(fā)生紅移的現(xiàn)象可能源自于N-Si-O組態(tài)轉變造成的缺陷態(tài)密度最大位置處的能級偏移和光學帶隙變窄引起的價帶頂上移.
[Abstract]:Amorphous silicon nitride doped silicon nitride (a-SiN x x O) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) at room temperature.By changing the flow ratio of SiH4) and NH3), the wavelength modulation of photoluminescence peak of thin film can be realized in the range of visible energy of 2.06~2.79eV.The optical absorption peaks overlap with the PL peaks in the optical absorption spectra, which indicates that the photoluminescence originates from the defect states around 0.65eV below the optical absorption edge.By analyzing the bond concentration of Fourier transform infrared spectroscopy (FTIR) and fitting the X ray photoelectron spectroscopy (XPS) with the peak of XPSN Si 2p,It is found that the enhancement of PL intensity is closely related to the increase of N-Si-O bonding concentration.It is further proved that the luminescent defects in a-SiN_x:O films are closely related to the N-Si-O bonding structure.In addition, the redshift of PL peak position with the increase of flow ratio R may be due to the energy level shift at the maximum position of defect state density caused by the N-Si-O configuration transition and the upward shift of the valence band caused by the narrowing of the optical band gap.
【作者單位】： 南京理工大學泰州科技學院;南京大學電子科學與工程學院;南京大學固體微結構物理國家重點實驗室;
【基金】：江蘇省高校自然科學研究面上項目(14KJB510014) 南京大學固體微結構物理國家重點實驗室開放課題基金(M29026) 江蘇省“青藍工程”
【分類號】：TB383.2;TQ127.2
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本文編號：1771573