本文選題：α-Al_2O_3:C晶體　切入點(diǎn)：α-Al_2O3:C陶瓷　出處：《昆明理工大學(xué)》2015年碩士論文

【摘要】：α-Al2O3:C晶體具有優(yōu)異的熱釋光和光釋光性能,在輻射劑量學(xué)領(lǐng)域,特別是光釋光劑量學(xué)量領(lǐng)域有著十分重要的應(yīng)用。目前,α-Al2O3:C釋光探測(cè)器研究方面主要存在兩個(gè)問(wèn)題：第一,市場(chǎng)上的晶體生長(zhǎng)方法單一(提拉法),晶體探測(cè)器價(jià)格昂貴,影響推廣使用；其次,學(xué)術(shù)上,碳原子在α-Al2O3晶格中的位置和價(jià)態(tài)還存在分歧,碳元素在劑量學(xué)性能中的真實(shí)作用還存在爭(zhēng)議。目前國(guó)內(nèi)還鮮有開(kāi)展有關(guān)α-Al2O3:C晶體的生長(zhǎng)和劑量學(xué)方面的研究工作。本論文從α-Al2O3:C晶體探測(cè)器材料的實(shí)際需要出發(fā)和以目前國(guó)內(nèi)外研究中存在的問(wèn)題為出發(fā)點(diǎn),主要開(kāi)展以下兩種材料的釋光探測(cè)器研究工作：(1)晶體探測(cè)器的制備：采用導(dǎo)模法(EFG法)快速生長(zhǎng)450×120×10mm α-Al2O3:C晶體,通過(guò)定向切割、研磨和拋光獲得a方向5x5×lmm的α-Al2O3:C晶體探測(cè)器。晶體生長(zhǎng)以6N高純碳粉和5N高純氧化鋁粉為原料,成功生長(zhǎng)了碳摻雜量為5000ppm的α-Al2O3:C晶體。研究了不同種類(lèi)輻射源(β、241Am、137Cs、60Co)對(duì)晶體的熱釋光和光釋光性能的影響。在中國(guó)計(jì)量科學(xué)院采用我們自己制備的α-Al2O3:C晶體探測(cè)器測(cè)得1μGy熱釋光的劑量響應(yīng)信號(hào),為世界目前己知的最高精度；低能量射線(xiàn)輻照時(shí)α-Al2O3:C晶體表現(xiàn)更高的熱釋光靈敏度為目前普遍使用的LiF(Mg, Cu, P)的3.5倍；高濃度碳摻雜(檢測(cè)碳含量大于5000ppm)α-Al2O3:C晶體的主熱釋光峰溫為255℃(即518K)附近,TL峰溫隨輻射劑量的增加向低溫方向移動(dòng),為二級(jí)動(dòng)力峰,低濃度碳摻雜(檢測(cè)碳含量大約3000ppm)α-Al2O3:C晶體時(shí)主熱釋光峰溫為190℃(463K)附近,TL峰溫不隨輻射劑量變化而變化,為一級(jí)動(dòng)力學(xué)峰；碳摻雜濃度高的晶體晶格發(fā)生畸變,使晶體的陷阱能級(jí)也有所變化。在低輻射劑量下,不同輻照射線(xiàn)α-Al2O3:C晶體的TL和OSL響應(yīng)曲線(xiàn)都呈良好線(xiàn)性,低能量射線(xiàn)241Am(58KeV)輻照時(shí)晶體的熱釋光靈敏度是高能量射線(xiàn)137Cs(660KeV)和60Co(1025KeV)3倍左右,137Cs(660KeV)和60Co(1025KeV)熱釋光和光釋光靈敏度則很相近。(2)陶瓷探測(cè)器的制備：利用真空燒結(jié)法制備了α-Al2O3:C陶瓷,切割后獲得5x5xlmm的α-Al2O3:C陶瓷探測(cè)器。實(shí)驗(yàn)結(jié)果表明：1850℃C燒結(jié)的α-Al2O3:C陶瓷具有最優(yōu)的TL和OSL性能,其劑量學(xué)性能約為導(dǎo)模法生長(zhǎng)的α-Al2O3:C晶體的60%。α-Al2O3:C陶瓷主熱釋光峰溫為200℃C(473K)附近,TL峰溫不隨輻射劑量變化而變化,為一級(jí)動(dòng)力學(xué)峰；OSL衰減曲線(xiàn)呈指數(shù)衰減,前期衰減很快,10s內(nèi)衰減50%以上,但其衰減速率不如晶體10s內(nèi)衰減90%以上,而后期衰速率逐漸變慢；光釋光強(qiáng)度隨輻照劑量增加而增強(qiáng)；在低輻射劑量(100-1000μGy)下,不同輻照射線(xiàn)α-Al2O3:C陶瓷的TL和OSL響應(yīng)曲線(xiàn)都呈良好線(xiàn)性,低能量射線(xiàn)241Am(58KeV)輻照時(shí)陶瓷的熱釋光靈敏度是高能量射線(xiàn)137Cs(660KeV)和60Co(1025KeV)2-2.5倍左右,137Cs(660KeV)和60Co(1025KeV)熱釋光和光釋光靈敏度相差不大；且α-Al2O3:C陶瓷的光釋光(OSL)響應(yīng)性能優(yōu)于α-Al2O3:C晶體,其制備更簡(jiǎn)單,所需時(shí)間更短,在劑量學(xué)領(lǐng)域具有潛在的應(yīng)用前景。與提拉法生長(zhǎng)的α-Al2O3:C晶體相比,導(dǎo)模法生長(zhǎng)的α-Al2O3:C晶體具有生長(zhǎng)速度快、成本低的優(yōu)點(diǎn)。真空燒結(jié)法制備的α-Al2O3:C陶瓷作為一種新型探測(cè)器材料,采用陶瓷工藝,可以在低于熔點(diǎn)的溫度下進(jìn)行燒結(jié),同時(shí)可以很方便地實(shí)現(xiàn)C的摻雜,探測(cè)器一致性好,生產(chǎn)成本低、效率高、激活離子摻雜濃度高且可控并可以制造大尺寸和形狀復(fù)雜的樣品,適宜批量生產(chǎn)。導(dǎo)模法生長(zhǎng)α-Al2O3:C晶體生長(zhǎng)時(shí)間約為2天,而真空燒結(jié)法制備的α-Al2O3:C陶瓷需36小時(shí)。
[Abstract]:A -Al2O3:C crystal has excellent thermoluminescent and photoluminescent properties, especially in the field of radiation dosimetry, photoluminescent dosimetry field application is very important. At present, alpha -Al2O3:C release optical detector research there are two main problems: first, the market of the single crystal growth method (Tirafa). The crystal detector is expensive, to promote the use of influence; secondly, the academic, carbon atoms in the alpha -Al2O3 lattice position and valence differences still exist, the real effect of carbon in the dosimetric performance in the current research work is still controversial. There are few growth and development related to alpha -Al2O3:C crystal dosimetric aspects. This thesis from the actual needs of alpha -Al2O3:C crystal detector materials at home and abroad and starting to study the problem as a starting point, mainly carried out the following two materials luminescence detector research work: (1) crystal The detector body prepared by EFG method (EFG method) the rapid growth of 450 x 120 x 10mm alpha -Al2O3:C crystal, directed by cutting, grinding and polishing to obtain alpha crystal -Al2O3:C detector a 5x5 * LMM. The direction of crystal growth by 6N high pure 5N powder and high purity aluminum oxide powder as raw material, long life success carbon doped alpha -Al2O3:C 5000ppm crystal. The effects of different kinds of radiation sources (beta, 241Am, 137Cs, 60Co) light and release effect of light on the performance of crystal pyroelectric. Using our own system of alpha crystal -Al2O3:C detector were measured 1 Gy thermoluminescence dose response signal in Chinese measurement Academy of Sciences, the highest accuracy of the world currently known; low energy X-ray irradiation at alpha -Al2O3:C crystal shows higher TL sensitivity for the current widespread use of LiF (Mg, Cu, P) 3.5 times; high concentration carbon doping (detection of carbon content is more than 5000ppm) main heat alpha -Al2O3: C crystal The luminescence peak temperature of 255 degrees (518K) near the TL peak temperature with the increase of radiation dose to the low temperature direction, two power peaks, low concentration of carbon doping (detection of carbon content of about 3000ppm) alpha -Al2O3:C crystal when the main thermoluminescence peak temperature of 190 degrees (463K) near the peak temperature of TL does not vary with the change of radiation dose, a kinetic peak; crystal lattice of carbon doped high concentration of distortion, the trap level crystal is changed. At low doses of radiation, different radiation ray alpha -Al2O3:C crystal TL and OSL response curves showed good linearity, low energy ray 241Am (58KeV when the crystal irradiated) thermoluminescence sensitivity is high energy X-ray 137Cs (660KeV) and 60Co (1025KeV) 3 times, 137Cs (660KeV) and 60Co (1025KeV) Tl and OSL sensitivity were similar. (2) ceramics preparation: alpha -Al2O3:C ceramics prepared by vacuum sintering after cutting by method. The 5x5xlmm alpha -Al2O3:C ceramic detector. The experimental results show that the alpha -Al2O3:C ceramic C 1850 degrees sintering has the best TL and OSL performance, the dosimetric performance is about 60%. alpha -Al2O3:C alpha -Al2O3:C main heat ceramic crystal growth method of the guided mode luminescence peak temperature is 200 DEG C (473K) near the peak temperature of TL does not vary with the change of radiation dose, a kinetic peak; OSL attenuation curve decays exponentially, the early decay quickly, 10s attenuation in more than 50%, but the decay rate of 10s crystal as attenuation in more than 90%, while the late decline rate gradually slows down; OSL intensity increases with the increasing of irradiation dose and the enhancement; low radiation dose (100-1000 Gy), different radiation ray alpha -Al2O3:C ceramics TL and OSL response curves showed good linearity, low energy X-ray 241Am (58KeV) irradiation ceramic thermoluminescence sensitivity is high energy X-ray 137Cs (660KeV) and 60Co (1025KeV) 2-2.5 times. Right, 137Cs (660KeV) and 60Co (1025KeV) Tl and OSL sensitivity difference; and a -Al2O3:C ceramic photoluminescent (OSL) response performance is better than that of alpha -Al2O3:C crystal, its preparation is simpler, shorter time, has a potential application prospect in the field of -Al2O3:C. Compared to alpha crystal dosimetry with the growth of Czochralski crystal growth, a -Al2O3:C guided mode method has a fast growth rate, and low cost advantages. Prepared by vacuum sintering of alpha -Al2O3:C ceramics as a new type of detector materials, using ceramic technology, can be sintered at temperatures below the melting point, and can easily achieve the doping of C detector good consistency, low production cost, high efficiency, high concentration doped and controllable and complex manufacturing large size and shape of the sample, suitable for mass production. EFG growth alpha -Al2O3:C crystal growth time is about 2 days, and vacuum Alpha -Al2O3:C ceramics prepared by 36 hours.

【學(xué)位授予單位】：昆明理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：O614.31;TQ174.7

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