本文關(guān)鍵詞： 集成電路 石英玻璃 表面粗糙度 化學機械拋光(CMP) 去除速率　出處：《微納電子技術(shù)》2017年01期 　論文類型：期刊論文

【摘要】：在工作壓力為2 psi(1 psi=6 894.76 Pa)、拋光頭轉(zhuǎn)速為55 r/min、拋盤轉(zhuǎn)速為60 r/min、流量為50 mL/min的條件下,對3英寸(1英寸=2.54 cm)的石英玻璃(99.99%)進行化學機械拋光(CMP)實驗。分別研究了磨料質(zhì)量分數(shù)(4%,8%,12%,16%,20%)、FA/OⅠ型螯合劑體積分數(shù)(1%,2%,3%,4%,5%)和FA/O型活性劑體積分數(shù)(1%,2%,3%,4%,5%)對石英玻璃化學機械拋光去除速率的影響。實驗結(jié)果表明:隨著磨料質(zhì)量分數(shù)增加,石英玻璃去除速率明顯提高,從11 nm/min提升到97.9 nm/min,同時表面粗糙度(Ra)逐漸降低,從2.950 nm降低到0.265 nm;FA/OⅠ型螯合劑通過化學作用對去除速率有一定的提高,Ra也有一定程度的減小,能夠降低到0.215 nm;FA/O型活性劑的加入會導(dǎo)致去除速率有所降低,但是能夠使Ra進一步降低至0.126 nm。最終在磨料、FA/OⅠ型螯合劑、FA/O型活性劑的協(xié)同作用下,石英玻璃去除速率達到93.4 nm/min,Ra達到0.126 nm,遠小于目前行業(yè)水平的0.9 nm。
[Abstract]:When the working pressure is 2 psi(1 psi=6 894.76 Paan, the rotating speed of polishing head is 55 r / min, the speed of throwing disk is 60 r / min, the flow rate is 50 mL/min. Chemical mechanical polishing (CMP) experiments were carried out on quartz glass (3 inches / 1 inch / 2.54 cm), respectively. The chemical mechanical polishing of quartz glass was studied. Experimental results show that: with the increase of abrasive mass fraction, The removal rate of quartz glass was obviously increased from 11 nm/min to 97.9 nm / min, and the surface roughness was gradually decreased from 2.950 nm to 0.265 nm FA-O 鈪，

本文編號：1542589