The photoluminescence（PL） and electrical properties of Al GaN/GaN high electron mobility transistors（HEMTs） with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low Fe doping concentrations,the introduction of Fe atoms can result in a downward shift of the Fermi level in the GaN buffer layer, since the Fe atoms substitute Ga and introduce an Fe_Ga^3+/2+ acceptor level. This results in a decrease in the yellow luminescence（YL） em... 

【文章來源】：Chinese Physics B. 2017,26(09)EISCI

【文章頁數(shù)】：5 頁

【文章目錄】：
1. Introduction
2. Experiment
3. Results and discussion
4. Conclusion



本文編號：3597482