Gallium nitride-（GaN） based high electron mobility transistors（HEMTs） provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid（DNA） hybridization. The Au-gated AlInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current(V_DS = 0.5 V) shows a clear decrease of 69μA upon the introduct... 

【文章來(lái)源】：Chinese Physics Letters. 2017,34(04)SCICSCD

【文章頁(yè)數(shù)】：4 頁(yè)

【參考文獻(xiàn)】：
博士論文
[1]AlIn（Ga）N/GaN HEMT器件性能及pH傳感器的研究[D]. 董燕.南京大學(xué) 2018



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