A novel reduced surface field （RESURF） Al GaN /GaN high electron mobility transistor（HEMT）with charged buffer layer is proposed. Its breakdown mechanism and on-state characteristics are investigated.The HEMT features buried Fluorine ions in the GaN buffer layer both under the Drift and the Gate region （FDG）. The section of FDG under the drift region （FD） not only reduces the electric field （E-field） peak at the gate edge but also enhances the E-field in the drift region by the assisted depletion... 

【文章來源】：Science China(Information Sciences). 2016年04期

【文章頁數(shù)】：10 頁

【參考文獻(xiàn)】：
期刊論文
[1]Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs[J]. DUAN BaoXing & YANG YinTang Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China.  Science China(Information Sciences). 2012(02)
[2]具有場板結(jié)構(gòu)的AlGaN/GaN HEMT的直流特性[J]. 魏珂,劉新宇,和致經(jīng),吳德馨.  半導(dǎo)體學(xué)報(bào). 2008(03)



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