A Si/Ge heterojunction line tunnel field-effect transistor（LTFET） with a symmetric heteromaterial gate is proposed.Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage current that is three orders of magnitude lower, and steeper subthreshold characteristics, without degradation in the on-state current. We reveal that these improvements are due to the induced local potential barrier, which arises from the energy-band profile modulation effect. Based on... 

【文章來源】：Chinese Physics B. 2017年01期

【文章頁數(shù)】：6 頁


本文編號：2939397