High-resistivity β-Ga₂O₃ thin films were grown on Si-doped n-type conductive β-Ga₂O₃ single crystals by molecular beam epitaxy（MBE）.Vertical-type Schottky diodes were fabricated,and the electrical properties of the Schottky diodes were studied in this letter.The ideality factor and the series resistance of the Schottky diodes were estimated to be about1.4 and 4.6×10⁶ Ω.The ionized donor concentration and the spreading voltage in the Schottky... 

【文章來源】：Chinese Physics B. 2016年01期 第761-765頁

【文章頁數】：5 頁


本文編號：2902031