基于DICE結(jié)構(gòu)的抗輻射移位寄存器設(shè)計(jì)研究
發(fā)布時(shí)間：2019-06-13 23:39
【摘要】：微電子技術(shù)的迅猛發(fā)展和航天科技的進(jìn)步,互補(bǔ)金屬氧化物半導(dǎo)體(Complementary Metal Oxide Semiconductor,CMOS)集成電路(Integrated Circuit,IC)在各種航天器和空間平臺(tái)中得到了廣泛地運(yùn)用,無(wú)論是對(duì)設(shè)備的控制或者是對(duì)數(shù)據(jù)的存儲(chǔ)和處理等,都在很大程度上依賴(lài)于IC,而這些設(shè)備所運(yùn)行的空間環(huán)境是一個(gè)充滿(mǎn)各種離子射線(xiàn)的輻射環(huán)境�？臻g飛行器運(yùn)行在這樣的輻射環(huán)境中時(shí),設(shè)備中的電子器件就很容易受到各種高能離子的輻射影響,引起其信息處理系統(tǒng)的功能異常甚至是電子器件的損毀,從而大大降低了空間飛行器運(yùn)行的可靠性。如何提高集成電路在輻射環(huán)境下工作的可靠性,成為了一個(gè)研究的熱點(diǎn)。寄存器作為集成電路中非常重要的存儲(chǔ)單元,對(duì)輻射效應(yīng)尤為敏感,對(duì)寄存器的抗輻射加固制約著數(shù)字存儲(chǔ)類(lèi)和邏輯類(lèi)集成電路的抗輻射性能。隨著航天事業(yè)的不斷發(fā)展,對(duì)集成電路的抗輻射性能要求越來(lái)越高。雙互鎖存(Dual interlocked storage cell,DICE)結(jié)構(gòu)單元作為一種抗輻射加固設(shè)計(jì)方法,目前正被廣泛地研究與應(yīng)用,基于DICE結(jié)構(gòu)的移位寄存器的設(shè)計(jì)對(duì)驗(yàn)證其抗輻射性能起著重要作用�；谏鲜霰尘�,為了驗(yàn)證DICE結(jié)構(gòu)加固設(shè)計(jì)方法在抗單粒子輻射方面的有效性,本文立足于0.18μm的商用工藝線(xiàn),設(shè)計(jì)了基于DICE結(jié)構(gòu)的1024位移位寄存器,并設(shè)計(jì)了單粒子輻射效應(yīng)實(shí)驗(yàn)測(cè)試系統(tǒng)。具體研究?jī)?nèi)容包括:對(duì)空間輻射環(huán)境,集成電路中的各種輻射效應(yīng)及損傷機(jī)理進(jìn)行了理論分析與研究;針對(duì)存儲(chǔ)單元尤為敏感的單粒子效應(yīng)(Single event effects,SEEs)進(jìn)行了重點(diǎn)地分析研究,并結(jié)合PN結(jié)和具體的鎖存單元來(lái)對(duì)單粒子效應(yīng)的影響進(jìn)行了分析說(shuō)明;對(duì)DICE結(jié)構(gòu)的鎖存單元的工作原理及其抗輻射性能進(jìn)行了仿真研究。分別設(shè)計(jì)了采用DICE結(jié)構(gòu)加固與采用傳統(tǒng)6管結(jié)構(gòu)的1024位的移位寄存器。首先利用軟件模擬仿真的方法來(lái)進(jìn)行單粒子輻射效應(yīng)仿真,對(duì)比研究了傳統(tǒng)結(jié)構(gòu)D觸發(fā)器與DICE結(jié)構(gòu)的D觸發(fā)器的抗單粒子輻射性能,并對(duì)時(shí)鐘樹(shù)等全局電路的抗輻射加固方法進(jìn)行了研究。其次在D觸發(fā)器的基礎(chǔ)上設(shè)計(jì)1024位的移位寄存器,并對(duì)所設(shè)計(jì)的移位寄存器進(jìn)行了版圖加固設(shè)計(jì)、優(yōu)化并完成了流片,對(duì)芯片功能測(cè)試的結(jié)果表明,達(dá)到了預(yù)期的設(shè)計(jì)效果。最后針對(duì)移位寄存器抗輻射實(shí)驗(yàn)的需要,設(shè)計(jì)并構(gòu)建了抗單粒子輻射實(shí)驗(yàn)測(cè)試系統(tǒng)。本文對(duì)抗輻射存儲(chǔ)單元的設(shè)計(jì)具有一定的參考意義。
[Abstract]:With the rapid development of microelectronics technology and the progress of space science and technology, complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor,CMOS integrated circuit (Integrated Circuit,IC) has been widely used in various spacecraft and space platforms. Whether it is the control of equipment or the storage and processing of data, it depends to a large extent on IC,. The space environment in which these devices operate is a radiation environment full of various ion rays. When the space vehicle runs in such a radiation environment, the electronic devices in the equipment are easily affected by the radiation of all kinds of high energy ions, which leads to the abnormal function of its information processing system and even the damage of the electronic devices, thus greatly reducing the reliability of the operation of the space vehicle. How to improve the reliability of integrated circuits in radiation environment has become a hot research topic. As a very important memory unit in integrated circuits, registers are particularly sensitive to radiation effect. The anti-radiation reinforcement of registers restricts the radiation resistance of digital storage and logic integrated circuits. With the continuous development of aerospace industry, the radiation resistance of integrated circuits is required to be higher and higher. As a kind of radiation reinforcement design method, double interlocked (Dual interlocked storage cell,DICE) structural unit is being widely studied and applied. The design of shift register based on DICE structure plays an important role in verifying its radiation resistance. Based on the above background, in order to verify the effectiveness of DICE structure reinforcement design method in resisting single particle radiation, a 1024 bit shift register based on DICE structure is designed based on 0.18 渭 m commercial process line, and an experimental test system for single particle radiation effect is designed. The specific research contents include: the space radiation environment, various radiation effects and damage mechanism in integrated circuits are analyzed and studied theoretically, and the single particle effect (Single event effects,SEEs, which is particularly sensitive to memory cells, is analyzed and studied, and the influence of single particle effect is analyzed and explained in combination with PN junction and specific latch unit. The working principle and radiation resistance of latch unit with DICE structure are simulated and studied. The 1024-bit shift register with DICE structure and traditional 6-tube structure is designed respectively. Firstly, the single particle radiation effect simulation is carried out by using the software simulation method, and the anti-single particle radiation performance of the traditional D flip-flop and the DICE D flip-flop is compared and studied, and the anti-radiation reinforcement method of the clock tree and other global circuits is studied. Secondly, a 1024-bit shift register is designed on the basis of D flip-flop, and the layout reinforcement design of the designed shift register is carried out, and the chip is optimized and completed. The results of the chip function test show that the expected design effect has been achieved. Finally, aiming at the need of anti-radiation experiment of shift register, a test system of anti-single particle radiation experiment is designed and constructed. The design of anti-radiation memory cell has certain reference significance in this paper.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN402
本文編號(hào)：2498913
[Abstract]:With the rapid development of microelectronics technology and the progress of space science and technology, complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor,CMOS integrated circuit (Integrated Circuit,IC) has been widely used in various spacecraft and space platforms. Whether it is the control of equipment or the storage and processing of data, it depends to a large extent on IC,. The space environment in which these devices operate is a radiation environment full of various ion rays. When the space vehicle runs in such a radiation environment, the electronic devices in the equipment are easily affected by the radiation of all kinds of high energy ions, which leads to the abnormal function of its information processing system and even the damage of the electronic devices, thus greatly reducing the reliability of the operation of the space vehicle. How to improve the reliability of integrated circuits in radiation environment has become a hot research topic. As a very important memory unit in integrated circuits, registers are particularly sensitive to radiation effect. The anti-radiation reinforcement of registers restricts the radiation resistance of digital storage and logic integrated circuits. With the continuous development of aerospace industry, the radiation resistance of integrated circuits is required to be higher and higher. As a kind of radiation reinforcement design method, double interlocked (Dual interlocked storage cell,DICE) structural unit is being widely studied and applied. The design of shift register based on DICE structure plays an important role in verifying its radiation resistance. Based on the above background, in order to verify the effectiveness of DICE structure reinforcement design method in resisting single particle radiation, a 1024 bit shift register based on DICE structure is designed based on 0.18 渭 m commercial process line, and an experimental test system for single particle radiation effect is designed. The specific research contents include: the space radiation environment, various radiation effects and damage mechanism in integrated circuits are analyzed and studied theoretically, and the single particle effect (Single event effects,SEEs, which is particularly sensitive to memory cells, is analyzed and studied, and the influence of single particle effect is analyzed and explained in combination with PN junction and specific latch unit. The working principle and radiation resistance of latch unit with DICE structure are simulated and studied. The 1024-bit shift register with DICE structure and traditional 6-tube structure is designed respectively. Firstly, the single particle radiation effect simulation is carried out by using the software simulation method, and the anti-single particle radiation performance of the traditional D flip-flop and the DICE D flip-flop is compared and studied, and the anti-radiation reinforcement method of the clock tree and other global circuits is studied. Secondly, a 1024-bit shift register is designed on the basis of D flip-flop, and the layout reinforcement design of the designed shift register is carried out, and the chip is optimized and completed. The results of the chip function test show that the expected design effect has been achieved. Finally, aiming at the need of anti-radiation experiment of shift register, a test system of anti-single particle radiation experiment is designed and constructed. The design of anti-radiation memory cell has certain reference significance in this paper.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN402
【參考文獻(xiàn)】
相關(guān)期刊論文 前10條
1 王海名;王海霞;楊帆;吳季;;載人航天、嫦娥工程及其他空間重大工程將產(chǎn)生重大突破[J];中國(guó)科學(xué)院院刊;2013年05期
2 曹暉;鄭淵;劉偉鑫;吾勤之;;宇航用SRAM存儲(chǔ)器單粒子效應(yīng)試驗(yàn)研究[J];上海航天;2013年03期
3 范雪;李威;李平;張斌;謝小東;王剛;胡濱;翟亞紅;;基于環(huán)形柵和半環(huán)形柵N溝道金屬氧化物半導(dǎo)體晶體管的總劑量輻射效應(yīng)研究[J];物理學(xué)報(bào);2012年01期
4 章凌宇;賈宇明;李磊;胡明浩;;基于DICE結(jié)構(gòu)的抗輻射SRAM設(shè)計(jì)[J];微電子學(xué);2011年01期
5 李玉紅;趙元富;岳素格;梁國(guó)朕;林任;;0.18μm工藝下單粒子加固鎖存器的設(shè)計(jì)與仿真[J];微電子學(xué)與計(jì)算機(jī);2007年12期
6 李致遠(yuǎn);;半導(dǎo)體器件輻射效應(yīng)及抗輻射加固[J];現(xiàn)代電子技術(shù);2006年19期
7 殷瑞祥,郭昒,陳敏;同步數(shù)字集成電路設(shè)計(jì)中的時(shí)鐘樹(shù)分析[J];華南理工大學(xué)學(xué)報(bào)(自然科學(xué)版);2005年06期
8 許漢成;;實(shí)踐五號(hào)衛(wèi)星總體電路分系統(tǒng)分析與設(shè)計(jì)[J];航天器工程;2003年02期
9 賀朝會(huì),李國(guó)政,羅晉生,劉恩科;CMOS SRAM單粒子翻轉(zhuǎn)效應(yīng)的解析分析[J];半導(dǎo)體學(xué)報(bào);2000年02期
10 王長(zhǎng)河;單粒子效應(yīng)對(duì)衛(wèi)星空間運(yùn)行可靠性影響[J];半導(dǎo)體情報(bào);1998年01期
相關(guān)博士學(xué)位論文 前1條
1 劉必慰;集成電路單粒子效應(yīng)建模與加固方法研究[D];國(guó)防科學(xué)技術(shù)大學(xué);2009年
相關(guān)碩士學(xué)位論文 前3條
1 周港;時(shí)序電路單粒子加固方法和技術(shù)研究[D];西安電子科技大學(xué);2012年
2 陳善強(qiáng);SRAM單粒子效應(yīng)評(píng)估方法研究[D];中國(guó)科學(xué)院研究生院（空間科學(xué)與應(yīng)用研究中心）;2010年
3 藏鑫;集成電路單元的抗輻射設(shè)計(jì)[D];哈爾濱工業(yè)大學(xué);2007年
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