【摘要】：針對碳化硅(SiC)金屬氧化物半導體場效應晶體管(MOSFET)在100 kHz低頻(LF)功放應用中出現(xiàn)的串擾問題,考慮SiC MOSFET寄生參數(shù)分階段研究串擾過程,分析關鍵參數(shù)對串擾電壓尖峰的影響,從而提出降低串擾尖峰的若干思路。為抑制串擾現(xiàn)象,采用無源抑制方法進行驅(qū)動設計,該驅(qū)動設計簡單可靠,具有較高工程應用價值。最后,進行驅(qū)動對比實驗,采用所提驅(qū)動設計對串擾的抑制效果顯著,正、負向串擾電壓尖峰比基本驅(qū)動電路分別降低73%和70%。
[Abstract]:Aiming at the crosstalk problem of MOSFET in 100kHz low-frequency(LF)power amplifier application, SiCMOSFET parasitic parameters are considered to study the crosstalk process in stages, analyze the influence of key parameters on crosstalk voltage spikes, and some ideas are put forward. In order to suppress crosstalk phenomenon, passive suppression method is adopted for driving design. The drive design is simple and reliable and has high engineering application value. Finally錛，

本文編號：2473417