發(fā)布時(shí)間：2019-03-20 18:38

【摘要】：為解決傳統(tǒng)CMOS帶隙基準(zhǔn)電壓源的溫度系數(shù)較高的問(wèn)題,采用高階曲率補(bǔ)償方法,提出了一種新型的帶隙基準(zhǔn)電壓源,這種基準(zhǔn)電壓源的結(jié)構(gòu)簡(jiǎn)單同時(shí)具有良好耗能性能,并且基準(zhǔn)電壓的溫度系數(shù)得到一定的優(yōu)化.利用NMOS管工作在亞閾值區(qū)域時(shí)漏電流和柵源電壓的非線性特性,通過(guò)引入與基準(zhǔn)電壓溫度系數(shù)成相反趨勢(shì)的高階補(bǔ)償電流,降低基準(zhǔn)電壓的溫度系數(shù),以較少的硬件消耗為代價(jià)大幅提高了其溫度特性,最后推導(dǎo)出補(bǔ)償后的基準(zhǔn)電壓的計(jì)算公式.基于0.18μm BCD工藝進(jìn)行仿真,結(jié)果表明:在-40℃~150℃溫度范圍內(nèi),基準(zhǔn)電壓的溫度系數(shù)為6.94×10~(-6);電源電壓VDD在2.5~5.0 V范圍內(nèi),線性調(diào)整率為0.033%,電路在5 V電源電壓為下工作電流為7.36μA;在典型工藝下(TT),電源抑制比(PSRR)為77.4 dB.基準(zhǔn)電壓的溫度特性的理論分析結(jié)果與仿真結(jié)果吻合較好,通過(guò)高階補(bǔ)償后,帶隙基準(zhǔn)電壓源表現(xiàn)出優(yōu)良的性能,滿足了帶隙基準(zhǔn)源的低功耗和低溫漂的設(shè)計(jì)要求.
[Abstract]:In order to solve the problem of high temperature coefficient of traditional CMOS bandgap reference voltage source, a new type of bandgap reference voltage source is proposed by using high order curvature compensation method. The structure of this voltage reference source is simple and has good energy dissipation performance. And the temperature coefficient of the reference voltage is optimized to a certain extent. Based on the nonlinear characteristics of leakage current and gate source voltage in the sub-threshold region of the NMOS transistor, the temperature coefficient of the reference voltage is reduced by introducing the high-order compensation current, which is opposite to the reference voltage temperature coefficient, in order to reduce the temperature coefficient of the reference voltage. At the cost of less hardware consumption, the temperature characteristic is greatly improved. Finally, the calculation formula of the compensated reference voltage is deduced. The simulation results based on 0.18 渭 m BCD process show that the temperature coefficient of the reference voltage is 6.94 脳 10 ~ (- 6) in the temperature range of-40 鈩，

本文編號(hào)：2444502