2微米波段低發(fā)散角瓦級GaSb基寬區(qū)量子阱激光器（英文）
發(fā)布時間：2019-03-16 08:32
【摘要】：通過在寬區(qū)GaSb基半導(dǎo)體激光器波導(dǎo)中引入魚骨型微結(jié)構(gòu),實現(xiàn)了瓦級激光輸出并且改善了側(cè)向發(fā)散角.本文通過分析微結(jié)構(gòu)的刻蝕深度對激光功率和遠場特性的影響,研究并發(fā)現(xiàn)了微結(jié)構(gòu)的引入可以明顯的提高激光器輸出功率,同時深刻蝕的微結(jié)構(gòu)對降低模式數(shù)和側(cè)向發(fā)散角有著更明顯的改善作用.相比于未引入微結(jié)構(gòu)的激光器,引入深刻蝕微結(jié)構(gòu)的寬區(qū)激光器側(cè)向95%功率定義的遠場發(fā)散角降低了大約57%,并且實現(xiàn)了超過1.1 W的最大連續(xù)輸出功率.
[Abstract]:The output of W-level laser is realized and the lateral divergence angle is improved by introducing the fish bone microstructure into the waveguide of GaSb-based semi-conductor laser in the wide region. In this paper, the influence of etching depth of microstructure on laser power and far-field characteristics is analyzed, and it is found that the introduction of microstructure can obviously improve the output power of laser. At the same time, the deep etched microstructure can improve the mode number and lateral divergence angle more obviously. Compared with the laser without microstructure, the far-field divergence angle defined by 95% lateral power of the wide-area laser with deep etching microstructure is reduced by 57%, and the maximum continuous output power of more than 1.1 W is achieved.
【作者單位】： 中國科學(xué)院長春光學(xué)精密機械與物理研究所;中國科學(xué)院大學(xué);中國科學(xué)院半導(dǎo)體研究所;
【基金】：Supported by National Natural Science Foundation of China(61404138,61474119,61435012) the National Basic Research Program of China(2013CB64390303) Jilin Provincial Natural Science Foundation(20160101243JC and 20150520105JH) the International Science Technology Cooperation Program of China(2013DFR00730)
【分類號】：TN248.4
本文編號：2441101
[Abstract]:The output of W-level laser is realized and the lateral divergence angle is improved by introducing the fish bone microstructure into the waveguide of GaSb-based semi-conductor laser in the wide region. In this paper, the influence of etching depth of microstructure on laser power and far-field characteristics is analyzed, and it is found that the introduction of microstructure can obviously improve the output power of laser. At the same time, the deep etched microstructure can improve the mode number and lateral divergence angle more obviously. Compared with the laser without microstructure, the far-field divergence angle defined by 95% lateral power of the wide-area laser with deep etching microstructure is reduced by 57%, and the maximum continuous output power of more than 1.1 W is achieved.
【作者單位】： 中國科學(xué)院長春光學(xué)精密機械與物理研究所;中國科學(xué)院大學(xué);中國科學(xué)院半導(dǎo)體研究所;
【基金】：Supported by National Natural Science Foundation of China(61404138,61474119,61435012) the National Basic Research Program of China(2013CB64390303) Jilin Provincial Natural Science Foundation(20160101243JC and 20150520105JH) the International Science Technology Cooperation Program of China(2013DFR00730)
【分類號】：TN248.4
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