多層電子器件的界面應(yīng)力及塑性發(fā)展分析
發(fā)布時間：2019-03-02 09:11
【摘要】：界面應(yīng)力是判斷界面失效的關(guān)鍵參數(shù),因此準確地預(yù)測界面應(yīng)力對多層電子器件的設(shè)計具有重要意義.多層電子器件的層間界面處會出現(xiàn)較大的應(yīng)力集中,引起結(jié)構(gòu)發(fā)生塑性變形,而塑性區(qū)域的存在會改變應(yīng)力集中程度,影響界面應(yīng)力的分布,幾何非線性和材料塑性的聯(lián)合作用又會導(dǎo)致界面應(yīng)力呈現(xiàn)不一樣的奇異性.本文綜合考慮彈塑性變形和幾何非線性,對多層電子器件的界面應(yīng)力分布及塑性區(qū)域發(fā)展進行了分析.以三層電子器件為例,詳細討論了電子器件在角位移加載和線位移加載兩種模式下,界面應(yīng)力分布和塑性區(qū)域的發(fā)展規(guī)律.相關(guān)結(jié)論可用于改善多層電子器件的工業(yè)設(shè)計.
[Abstract]:The interface stress is the key parameter to judge the interface failure, so it is very important to predict the interface stress accurately for the design of multi-layer electronic devices. A large stress concentration will occur at the interlayer interface of multilayer electronic devices, resulting in plastic deformation of the structure, and the presence of plastic region will change the degree of stress concentration and affect the distribution of interfacial stress, and the stress distribution of the interface will be affected by the presence of plastic region. The combination of geometric nonlinearity and material plasticity will lead to different singularity of interfacial stress. Considering the elasto-plastic deformation and geometric nonlinearity, the interfacial stress distribution and the development of plastic region of multilayer electronic devices are analyzed in this paper. Taking three-layer electronic devices as an example, the development rules of interfacial stress distribution and plastic region of electronic devices in two modes of angular displacement loading and line displacement loading are discussed in detail. The relevant conclusions can be used to improve the industrial design of multilayer electronic devices.
【作者單位】： 杭州電子科技大學(xué)機械工程學(xué)院;
【基金】：國家自然科學(xué)基金(11302064)
【分類號】：TN602
本文編號：2432911
[Abstract]:The interface stress is the key parameter to judge the interface failure, so it is very important to predict the interface stress accurately for the design of multi-layer electronic devices. A large stress concentration will occur at the interlayer interface of multilayer electronic devices, resulting in plastic deformation of the structure, and the presence of plastic region will change the degree of stress concentration and affect the distribution of interfacial stress, and the stress distribution of the interface will be affected by the presence of plastic region. The combination of geometric nonlinearity and material plasticity will lead to different singularity of interfacial stress. Considering the elasto-plastic deformation and geometric nonlinearity, the interfacial stress distribution and the development of plastic region of multilayer electronic devices are analyzed in this paper. Taking three-layer electronic devices as an example, the development rules of interfacial stress distribution and plastic region of electronic devices in two modes of angular displacement loading and line displacement loading are discussed in detail. The relevant conclusions can be used to improve the industrial design of multilayer electronic devices.
【作者單位】： 杭州電子科技大學(xué)機械工程學(xué)院;
【基金】：國家自然科學(xué)基金(11302064)
【分類號】：TN602
【相似文獻】
相關(guān)期刊論文 前3條
1 秦飛;劉程艷;王卓茹;;微電子封裝中焊錫接點的界面應(yīng)力奇異性[J];北京工業(yè)大學(xué)學(xué)報;2012年05期
2 徐靜平,黎沛濤,李斌;氮化感應(yīng)致n-MOSFETsSi/SiO_2界面應(yīng)力的研究[J];電子學(xué)報;2000年02期
3 何洪文;趙海燕;馬立民;徐廣臣;郭福;;Cu/Sn3.0Ag0.5Cu/Cu焊點電遷移過程中界面應(yīng)力演變的研究[J];稀有金屬材料與工程;2012年S2期
相關(guān)會議論文 前1條
1 武偉;秦飛;李瑋;;TSV刻蝕粗糙度對界面應(yīng)力的影響[A];中國力學(xué)大會——2013論文摘要集[C];2013年
，本文編號：2432911
本文鏈接：http://www.sikaile.net/kejilunwen/dianzigongchenglunwen/2432911.html
最近更新
教材專著
