【摘要】：硅光子學的發(fā)展激發(fā)了人們對硅基光波導器件的研究以及設計多功能的光信號處理芯片和光通信器件。其中磁光硅基波導器件(如磁光隔離器)的研究是目前大規(guī)模集成芯片的一個研究熱點。本文基于磁光相移的原理,主要研究磁光硅基波導結(jié)構(gòu)在微環(huán)中的應用,分析磁光微環(huán)諧振器的磁場傳感特性和磁光Sagnac微環(huán)結(jié)構(gòu)的磁光開關(guān)特性。本文主要的內(nèi)容和創(chuàng)新如下:1.分析了三種磁化方向下磁光效應對導波光傳播特性的影響,重點研究了水平和垂直兩種橫向磁化時二維平板波導和三維矩形波導的磁光相移特點。采用COMSOL仿真軟件計算分析了Ce:YIG/Si/SiO_2和SiO_2/Si-Ce:YIG/SiO_2兩種磁光波導結(jié)構(gòu)中磁化強度對導波光場分布及其傳播常數(shù)的影響。研究表明,平行于Ce:YIG/Si波導界面磁化時,上述兩種波導結(jié)構(gòu)中可獲得明顯的磁光相移,它們對應的導波光模式分別為TM波和TE波。2.采用SiO_2/Si-Ce:YIG/SiO_2硅基磁光波導設計了一種微環(huán)諧振結(jié)構(gòu)用于磁場測量,仿真計算了準TE模導波光傳輸時微環(huán)諧振波長移動隨垂直磁化強度的變化。對于半徑為20μm的磁光微環(huán),優(yōu)化波導寬度可使磁場測量靈敏度達到0.0054nm/(kA/m),飽和磁化時微環(huán)諧振波長移動為0.52nm。3.提出一種基于Ce:YIG/Si/SiO_2波導結(jié)構(gòu)的Sagnac微環(huán)諧振型磁光開關(guān)器件,當微環(huán)長度為100μm時開關(guān)磁化強度為53.82kA/m(低于飽和磁化強度),可實現(xiàn)0.96nm帶寬信號的光開功能。與基于直波導的Sagnac磁光開關(guān)相比,大大降低了器件尺寸和開關(guān)磁化強度;與基于微環(huán)諧振器的波長移動光開關(guān)相比,具有更大的器件帶寬和開關(guān)消光比性能。
[Abstract]:The development of silicon photonics has stimulated the research of silicon-based optical waveguide devices and the design of multifunctional optical signal processing chips and optical communication devices. The research of magneto-optic silicon-based waveguide devices (such as magneto-optic isolators) is a hot topic in the field of large-scale integrated chips. Based on the principle of magneto-optic phase shift, this paper mainly studies the application of magneto-optic silicon-based waveguide structure in microring, and analyzes the magnetic field sensing characteristics of magneto-optic microring resonator and the magneto-optic switch characteristics of magneto-optic Sagnac microloop structure. The main contents and innovations of this paper are as follows: 1. The effect of magneto-optical efficiency on the propagation characteristics of guided wave in three magnetized directions is analyzed. The magneto-optic phase shift characteristics of two-dimensional planar waveguide and three-dimensional rectangular waveguide are studied in horizontal and vertical transverse magnetization. The influence of magnetization on the field distribution and propagation constant of guided wave in Ce:YIG/Si/SiO_2 and SiO_2/Si-Ce:YIG/SiO_2 magneto-optic waveguide structures is calculated and analyzed by COMSOL simulation software. The results show that the magneto-optic phase shift can be obtained in the two waveguide structures parallel to the magnetization of the interface of the Ce:YIG/Si waveguide. The corresponding modes of the guided wave are TM wave and TE wave respectively. A microring resonant structure is designed for magnetic field measurement using SiO_2/Si-Ce:YIG/SiO_2 silicon-based magneto-optical waveguide. The variation of the resonant wavelength shift with vertical magnetization during quasi-TE mode guided wave propagation is simulated. For magneto-optic microrings with a radius of 20 渭 m, the magnetic measurement sensitivity can reach 0.0054nm/ (kA/m) by optimizing the waveguide width, and the resonant wavelength shifts to 0.52nm.3at saturation magnetization. A Sagnac microring resonant magneto-optic switch based on Ce:YIG/Si/SiO_2 waveguide structure is proposed. When the length of the microloop is 100 渭 m, the magnetization of the switch is 53.82kA/m (lower than the saturation magnetization). The optical opening function of 0.96nm bandwidth signal can be realized. Compared with the Sagnac magneto-optic switch based on the straight waveguide, the device size and the switching magnetization are greatly reduced, and compared with the wavelength moving optical switch based on the microloop resonator, the device bandwidth and the switching extinction ratio are much larger.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN256

【參考文獻】

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本文編號：2427380