發(fā)布時(shí)間：2019-01-30 20:21

【摘要】：硅片是集成電路(Integrated Circuit,IC)最常用的基底材料,其表面質(zhì)量的高低直接影響著IC芯片的性能。現(xiàn)代社會(huì)對(duì)IC的需求量不斷增加,對(duì)其性能以及集成度要求越來(lái)越高,為增大IC芯片產(chǎn)量,降低器件的制造成本,硅片尺寸趨向大直徑化;同時(shí),IC集成度的不斷增加,對(duì)硅片表面質(zhì)量提出了更高的要求,即要求硅片表面越來(lái)越平坦、刻蝕線寬越來(lái)越細(xì)等,這些要求給硅片加工,尤其是拋光加工帶來(lái)了很多困難。而傳統(tǒng)游離磨料拋光硅片的加工方法普遍存在效率低、污染環(huán)境等問(wèn)題,因此人們不斷探索新的加工工藝,以適應(yīng)大尺寸、高質(zhì)量硅片表面的加工要求。固結(jié)磨料拋光工藝的應(yīng)用很好地解決了傳統(tǒng)游離磨料拋光過(guò)程中存在的材料去除率低、磨料浪費(fèi)、污染環(huán)境和拋光質(zhì)量不易控制等問(wèn)題,又鑒于超聲橢圓振動(dòng)輔助加工具有提高加工效率、改善工件表面質(zhì)量和延長(zhǎng)刀具壽命等方面的優(yōu)勢(shì),而被廣泛應(yīng)用于硬脆性材料的精密加工�；谶@一背景,本文提出了超聲橢圓振動(dòng)輔助固結(jié)磨粒拋光硅片新技術(shù),并開(kāi)展了以下研究:首先,對(duì)拋光實(shí)驗(yàn)裝置的主要構(gòu)件及其拋光原理進(jìn)行了介紹,并分析了拋光硅片表面形貌形成及材料去除與拋光運(yùn)動(dòng)過(guò)程;其次,為了更好地得出拋光硅片表面形貌及材料去除規(guī)律,提出了軌跡點(diǎn)密度這一概念及其仿真模型,進(jìn)行了拋光硅片整個(gè)表面有無(wú)超聲的對(duì)比仿真,并開(kāi)展了相應(yīng)的實(shí)驗(yàn)研究,結(jié)果表明硅片中心的材料去除量較多;最后,鑒于硅片表面的材料去除量非常小,對(duì)該值的測(cè)量非常困難,為了便于精確測(cè)量和更正確地反映拋光表面實(shí)際情況,開(kāi)展了硅片表面圓環(huán)區(qū)域的實(shí)驗(yàn)與仿真驗(yàn)證研究,得到了拋光硅片表面粗糙度和材料去除量與進(jìn)給速度、轉(zhuǎn)速及拋光力之間的工藝規(guī)律,并得到如下結(jié)論:UFP拋光過(guò)程更穩(wěn)定,更有利于拋光硅片表面粗糙度的減小和材料去除量的提高,所得結(jié)論可以為今后進(jìn)一步的理論研究和實(shí)際生產(chǎn)提供參考。
[Abstract]:Silicon wafer is the most commonly used substrate material for integrated circuit (Integrated Circuit,IC), and its surface quality directly affects the performance of IC chip. In modern society, the demand for IC is increasing, and the demand for its performance and integration is becoming higher and higher. In order to increase the output of IC chips and reduce the manufacturing cost of devices, the size of silicon wafers tends to become larger in diameter. At the same time, with the increasing integration of IC, the surface quality of silicon wafer is required to be more and more flat, and the etching linewidth is becoming thinner and thinner. These requirements have brought a lot of difficulties to wafer processing, especially to polishing. However, the traditional free abrasive polishing silicon wafer processing methods generally have low efficiency, environmental pollution and other problems, so people are constantly exploring new processing technology to meet the needs of large size and high quality silicon wafer surface processing. The application of solidified abrasive polishing process has solved the problems such as low material removal rate, abrasive waste, environmental pollution and difficult control of polishing quality in traditional free abrasive polishing process. In view of the advantages of ultrasonic elliptical vibration aided machining, such as improving machining efficiency, improving workpiece surface quality and prolonging tool life, it is widely used in precision machining of hard brittle materials. Based on this background, a new technology of ultrasonic elliptical vibration assisted abrasive particle polishing silicon wafer is proposed, and the following researches are carried out: firstly, the main components and polishing principle of polishing experimental device are introduced. The formation of surface morphology, material removal and polishing motion of polished silicon wafer were analyzed. Secondly, in order to better obtain the surface morphology and material removal law of polished silicon wafer, the concept of trajectory point density and its simulation model are put forward, and the ultrasonic simulation of the whole surface of polished silicon wafer is carried out. The experimental results show that there is more material removal in the center of silicon wafer. Finally, in view of the very small amount of material removal on the wafer surface, it is very difficult to measure the value. In order to accurately measure and more accurately reflect the actual situation of the polished surface, the experimental and simulation research on the annular region of the wafer surface is carried out. The process rules between surface roughness, material removal amount and feed speed, rotation speed and polishing force of polished silicon wafer are obtained. The following conclusions are obtained: the polishing process of UFP is more stable. It is more favorable to decrease the surface roughness of polished silicon wafer and improve the material removal amount. The conclusions obtained can provide a reference for further theoretical research and practical production in the future.
【學(xué)位授予單位】：江西農(nóng)業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN405

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