【摘要】：通過相同材料電阻的比值來抵消帶隙基準源的一階溫度系數(shù)來達到低溫度系數(shù),同時還設計了修調(diào)電路進一步提高基準電壓的精度。采用0.8μm BiCMOS 9V工藝流片,帶隙基準源面積為0.035 mm~2。結(jié)果表明:在-40℃~125℃范圍內(nèi),基準電壓的溫度系數(shù)為11×10~(-6)/℃;電源電壓在4.5 V~9.0 V范圍內(nèi)變化時,基準電壓的變化量為0.4 m V,電源調(diào)整率為0.09 m V/V。
[Abstract]:The first order temperature coefficient of the bandgap reference source is offset by the ratio of the same material resistance to achieve the low temperature coefficient. At the same time, the correction circuit is designed to further improve the precision of the reference voltage. Using 0.8 渭 m BiCMOS 9V flow sheet, the bandgap reference area is 0.035 mm~2.. The results show that the temperature coefficient of the reference voltage is 11 脳 10 ~ (-6) / 鈩，

本文編號：2340231