發(fā)布時間：2018-11-17 13:06

【摘要】：隨著科學(xué)技術(shù)的快速發(fā)展,多芯片組件技術(shù)以其體積小、組裝密度高、性能高、可靠性高等特點成為了當(dāng)前電子產(chǎn)品領(lǐng)域研究和發(fā)展的熱點。與此同時,產(chǎn)品的功能不斷增加,單位體積的功耗越來越大,設(shè)備內(nèi)部的熱流密度日益增高,最終導(dǎo)致電子元件溫度過高,嚴重影響了產(chǎn)品的可靠性,散熱已經(jīng)成為電子設(shè)備應(yīng)用中必不可少的一項任務(wù)。本文通過理論、仿真、實驗三者相結(jié)合的分析方法開展了以下工作:首先,以單芯片組件的擴展熱阻為研究對象,對比分析各種相關(guān)計算理論的特點;針對簡單矩形熱源模型,基于理論計算與FLOEFD仿真分析對比,驗證仿真計算的正確性;在此基礎(chǔ)上,研究擴展熱阻與模型各影響參數(shù)之間的變化規(guī)律,并利用響應(yīng)曲面法得到擴展熱阻關(guān)于各因素的響應(yīng)模型,為進一步改善電子產(chǎn)品的散熱性能提供方案參考。其次,針對多芯片組件的熱耦合效應(yīng),通過建立熱阻網(wǎng)絡(luò)模型和熱阻矩陣兩種方法分別理論計算兩芯片組件和四芯片組件的溫度,并與FLOEFD仿真值進行對比,驗證仿真計算的正確性;然后通過仿真分析研究模型參數(shù)的變化對于熱耦合效應(yīng)的影響,對于多芯片組件的熱可靠性設(shè)計有著參考意義。最后,為了實驗驗證多芯片組件的熱阻特性,針對擴展熱阻模型和熱耦合模型設(shè)計熱實驗平臺并進行搭建,使其能夠測得芯片或基板的溫度情況。在此基礎(chǔ)上,通過數(shù)據(jù)處理將實驗結(jié)果與軟件仿真進行對比,驗證了模型熱阻與各參數(shù)之間的變化規(guī)律,并對實驗中可能產(chǎn)生的誤差進行分析。
[Abstract]:With the rapid development of science and technology, multi-chip module technology has become a hot spot in the field of electronic products because of its small size, high assembly density, high performance and high reliability. At the same time, the function of the product is increasing, the power consumption per unit volume is increasing, and the heat flux inside the equipment is increasing. Finally, the temperature of the electronic component is too high, which seriously affects the reliability of the product. Heat dissipation has become an indispensable task in the application of electronic equipment. In this paper, the following work is carried out through the combination of theory, simulation and experiment. Firstly, the characteristics of various related calculation theories are compared and analyzed by taking the extended thermal resistance of a single chip assembly as the research object. For the simple rectangular heat source model, the correctness of the simulation calculation is verified by comparing the theoretical calculation with the FLOEFD simulation analysis. On this basis, the law of variation between the extended thermal resistance and the influence parameters of the model is studied, and the response model of the extended thermal resistance on each factor is obtained by using the response surface method, which provides a scheme reference for further improving the heat dissipation performance of electronic products. Secondly, in view of the thermal coupling effect of multi-chip components, the temperature of two chip components and four chip components are calculated by establishing thermal resistance network model and thermal resistance matrix, respectively, and compared with the simulation value of FLOEFD. Verify the correctness of the simulation calculation; Then, the influence of the model parameters on the thermal coupling effect is studied by simulation analysis, which has reference significance for the thermal reliability design of multi-chip modules. Finally, in order to verify the thermal resistance characteristics of multi-chip modules, a thermal experimental platform is designed and built for the extended thermal resistance model and the thermal coupling model, so that the temperature of the chip or substrate can be measured. On this basis, the experimental results are compared with the software simulation through data processing to verify the variation of the thermal resistance of the model and the parameters, and the possible errors in the experiment are analyzed.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN02

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