【摘要】：采用四線法研究Ag/Si O2/p-Si∶B/Si O2/Ag器件在不同溫度下的電輸運(yùn)性能(V-I特性),在低溫V-I特性曲線中觀察到了明顯的熱滯現(xiàn)象.為了消除熱滯現(xiàn)象帶來(lái)的實(shí)驗(yàn)誤差,文中提出了采用增強(qiáng)系統(tǒng)熱傳導(dǎo)以及延長(zhǎng)連續(xù)兩次測(cè)量的間隔時(shí)間的方法,并通過(guò)延長(zhǎng)連續(xù)兩次測(cè)量時(shí)間間隔的方式消除了熱滯對(duì)器件電輸運(yùn)性能的影響.結(jié)果表明,在進(jìn)行半導(dǎo)體基材料的電性能及磁阻效應(yīng)的研究時(shí),必須考慮熱效應(yīng)可能帶來(lái)的影響,否則將導(dǎo)致錯(cuò)誤的實(shí)驗(yàn)結(jié)果.
[Abstract]:The electrical transport properties (V-I characteristics) of Ag/Si O2/p-Si:B/Si O2/Ag devices at different temperatures are studied by four-wire method. The obvious thermal hysteresis phenomenon is observed in the V-I characteristic curves at low temperature. In order to eliminate the experimental error caused by thermal hysteresis, a method of enhancing the heat conduction of the system and prolonging the interval between two successive measurements is proposed in this paper. The influence of thermal hysteresis on the electrical transport performance of the device is eliminated by extending the time interval between two successive measurements. The results show that the thermal effect must be taken into account in the study of the electrical properties and magnetoresistive effects of semiconductor based materials, otherwise it will lead to wrong experimental results.
【作者單位】： 武漢理工大學(xué)材料復(fù)合新技術(shù)國(guó)家重點(diǎn)實(shí)驗(yàn)室;
【基金】：國(guó)家自然科學(xué)基金資助項(xiàng)目(11574243,11174231)~~
【分類號(hào)】：TN304

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本文編號(hào)：2319867