【摘要】：可控硅從上世紀(jì)50年代問(wèn)世以來(lái),經(jīng)過(guò)近60年的發(fā)展已經(jīng)在現(xiàn)代社會(huì)的生產(chǎn)和生活中扮演著越來(lái)越重要的角色:由于具有優(yōu)良的調(diào)頻、變速性能,可控硅被廣泛應(yīng)用在工業(yè)生產(chǎn);同時(shí)可控硅也被大量應(yīng)用在漏電保護(hù)器、白色家電以及摩托車(chē)配件等消費(fèi)電子領(lǐng)域。根據(jù)觸發(fā)電流的大小,可控硅被大致劃分為強(qiáng)觸發(fā)可控硅和微觸發(fā)可控硅兩大類(lèi)。其中微觸發(fā)可控硅由于具有常溫下觸發(fā)電流小、柵極功耗低等優(yōu)點(diǎn)越來(lái)越受到市場(chǎng)的重視,但是微觸發(fā)可控硅的觸發(fā)電流受溫度影響較大,高溫下觸發(fā)電流減小會(huì)帶來(lái)誤觸發(fā)的問(wèn)題,嚴(yán)重時(shí)甚至?xí)箍煽毓杼幱陂L(zhǎng)開(kāi)狀態(tài),失去開(kāi)關(guān)的作用;低溫下觸發(fā)電流增大會(huì)帶來(lái)觸發(fā)困難,柵極功耗增大的問(wèn)題�；诖�,本文分別提出可以減小低溫環(huán)境和高溫環(huán)境下觸發(fā)電流溫度系數(shù)的方法,并且提供一種低溫度系數(shù)觸發(fā)電流的可控硅設(shè)計(jì),旨在穩(wěn)定微觸發(fā)可控硅的觸發(fā)電流溫度系數(shù),使其在高溫下能穩(wěn)定工作,避免誤觸發(fā)等問(wèn)題的發(fā)生。本設(shè)計(jì)的主要參數(shù)指標(biāo)是:正反向耐壓均在800V以上,導(dǎo)通電壓小于2V,常溫下(25℃)的觸發(fā)電流小于100μA,高溫下(80℃)觸發(fā)電流和常溫下觸發(fā)電流大小的比值大于0.5。本文主要包括以下幾個(gè)方面:1、詳細(xì)介紹可控硅的觸發(fā)原理,從理論上分析觸發(fā)電流隨溫度變化的原因,分別提出能夠穩(wěn)定低溫和高溫下觸發(fā)電流溫度系數(shù)的方法;2、對(duì)帶有多晶硅電阻條的可控硅結(jié)構(gòu)進(jìn)行工藝仿真,拉偏工藝參數(shù),優(yōu)化過(guò)后使仿真結(jié)果符合設(shè)計(jì)要求。確定各部分尺寸后進(jìn)行版圖設(shè)計(jì);3、完成工藝仿真、版圖設(shè)計(jì)后進(jìn)行流片實(shí)驗(yàn),流片完成后進(jìn)行測(cè)試,測(cè)試結(jié)果:正向擊穿電壓為800V,反向擊穿電壓1000V;125℃時(shí)的正向漏電為35μA,反向漏電為50μA;常溫下(25℃)的觸發(fā)電流IGT(25℃)為60μA,高溫下(80℃)的觸發(fā)電流IGT(80℃)為36μA,觸發(fā)電流的溫度系數(shù)IGT(80℃)/IGT(25℃)等于0.6;正向?qū)▔航禐?.96V;臨界di/dt值為18A/μs,臨界dv/dt值為20V/μs。測(cè)試結(jié)果表明:各項(xiàng)參數(shù)均達(dá)到設(shè)計(jì)要求。
[Abstract]:Since the advent of SCR in the 1950s, after nearly 60 years of development, it has played an increasingly important role in the production and life of modern society. Thyristor is widely used in industrial production, and it is also widely used in consumer electronics such as leakage protectors, white appliances and motorcycle accessories. According to the magnitude of trigger current, thyristor is divided into two categories: strong trigger thyristor and microtriggered thyristor. Among them, the micro-trigger thyristor has been paid more and more attention to by the market because of its advantages of low trigger current and low grid power consumption at room temperature, but the trigger current of micro-trigger thyristor is greatly affected by temperature. The decrease of trigger current at high temperature will lead to the problem of false trigger, and in serious cases, the thyristor will be in a long open state and lose the function of switch. At low temperature, the increase of trigger current will lead to the trigger difficulty and the increase of grid power consumption. Based on this, this paper proposes a method to reduce the trigger current temperature coefficient in low temperature environment and high temperature environment, and provides a low temperature coefficient trigger current thyristor design. The aim of this paper is to stabilize the trigger current temperature coefficient of microtrigger thyristor, so that it can work stably at high temperature and avoid the problem of misfiring. The main parameters of this design are as follows: the forward and backward voltages are above 800V, the conduction voltage is less than 2V, the triggering current at room temperature (25 鈩，

本文編號(hào)：2277093