基于態(tài)密度模型的銦鎵鋅氧化物薄膜晶體管的仿真研究
發(fā)布時(shí)間：2018-09-01 08:35
【摘要】：TFT作為平板顯示的核心器件,是影響顯示效果的關(guān)鍵。利用a-IGZO材料作為有源層的TFT器件與傳統(tǒng)的硅基TFT相比具有制作溫度低、均一性好、透光性強(qiáng)、以及可制作于柔性襯底等諸多優(yōu)勢(shì),目前是國(guó)內(nèi)外學(xué)者廣泛研究的熱點(diǎn)問題。本文從IGZO材料特性入手建立IGZO-TFT器件模型,對(duì)雙有源層器件進(jìn)行參數(shù)優(yōu)化,并分析有源層間的界面問題,旨在為雙有源層IGZO-TFT的后續(xù)設(shè)計(jì)和制作提供參考。首先,我們利用MS軟件分別對(duì)ZnO、有氧空位的ZnO、原子交替型和列交替型兩種結(jié)構(gòu)的IGZO材料進(jìn)行了模擬仿真,通過對(duì)比各種材料的能帶結(jié)構(gòu)、態(tài)密度,得出了IGZO材料中各類原子對(duì)能帶結(jié)構(gòu)和態(tài)密度的影響。我們發(fā)現(xiàn)IGZO的導(dǎo)帶底主要由金屬原子的s軌道電子貢獻(xiàn),其中貢獻(xiàn)最大的是In原子的5s2軌道,而Ga原子具有抑制氧空位的能力。同時(shí)由于In的5s2軌道具有球形對(duì)稱的特點(diǎn),IGZO材料對(duì)結(jié)構(gòu)重構(gòu)不具有敏感性。其次,我們基于態(tài)密度模型利用TCAD軟件對(duì)IGZO-TFT進(jìn)行了仿真,同時(shí)與實(shí)驗(yàn)所得數(shù)據(jù)進(jìn)行對(duì)比,驗(yàn)證了模型的正確性。然后我們對(duì)器件進(jìn)行了優(yōu)化,我們發(fā)現(xiàn)有源層厚度為20nm、溝道長(zhǎng)度為30μm、絕緣層厚度為60nm的IGZO-TFT器件具有較好的器件性能。最后給出了實(shí)際的工藝結(jié)構(gòu)圖。最后,我們基于以上模型對(duì)雙有源層IGZO-TFT進(jìn)行了模擬仿真,研究了有源層厚度變化,及有源層間界面位置對(duì)器件性能的影響。在理想情況下,我們得到了閾值電壓Vth=-0.89V、亞閾值擺幅SS=0.27、開關(guān)電流比Ion/Ioff=6.98×1014的高性能器件。同時(shí)我們發(fā)現(xiàn)界面位置在主要導(dǎo)電區(qū)邊緣時(shí),器件性能最佳。
[Abstract]:As the core device of flat panel display, TFT is the key to the effect of display. Compared with traditional silicon based TFT, TFT devices using a-IGZO as active layer have many advantages, such as low temperature, good uniformity, strong transmittance, and can be fabricated on flexible substrates, etc. At present, it is a hot issue widely studied by scholars at home and abroad. Based on the characteristics of IGZO materials, this paper establishes a IGZO-TFT device model, optimizes the parameters of dual-active layer devices, and analyzes the interface between active layers. The purpose of this paper is to provide a reference for the subsequent design and fabrication of dual-active layer IGZO-TFT. First of all, we use the MS software to simulate the ZnO, atom alternating structure and column alternating type IGZO material of ZnO, aerobic vacancy, and compare the energy band structure and the density of states of each kind of material by comparing the energy band structure and the density of states of each kind of material. The effects of various atoms on the band structure and density of states in IGZO materials are obtained. We find that the bottom of the conduction band of IGZO is mainly contributed by the S-orbital electrons of metal atoms, and the most important contribution is the 5s2 orbital of the In atom, while the Ga atom has the ability to inhibit the oxygen vacancy. At the same time, because of the spherical symmetry of In's 5s2 orbit, IGZO material is not sensitive to structural reconstruction. Secondly, we use the TCAD software to simulate the IGZO-TFT based on the density of states model, and compare with the experimental data to verify the correctness of the model. Then we optimize the device. We find that the IGZO-TFT device with active layer thickness of 20 nm, channel length of 30 渭 m and insulation layer thickness of 60nm has good performance. Finally, the actual process structure diagram is given. Finally, we simulate the dual-active layer IGZO-TFT based on the above model, and study the influence of the thickness of the active layer and the interfacial position of the active layer on the performance of the device. Under ideal conditions, we have obtained a high performance device with threshold voltage Vth=-0.89V, sub-threshold swing SS=0.27, switch current ratio Ion/Ioff=6.98 脳 1014. At the same time, we find that the device has the best performance when the interface is located at the edge of the main conductive region.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN321.5
[Abstract]:As the core device of flat panel display, TFT is the key to the effect of display. Compared with traditional silicon based TFT, TFT devices using a-IGZO as active layer have many advantages, such as low temperature, good uniformity, strong transmittance, and can be fabricated on flexible substrates, etc. At present, it is a hot issue widely studied by scholars at home and abroad. Based on the characteristics of IGZO materials, this paper establishes a IGZO-TFT device model, optimizes the parameters of dual-active layer devices, and analyzes the interface between active layers. The purpose of this paper is to provide a reference for the subsequent design and fabrication of dual-active layer IGZO-TFT. First of all, we use the MS software to simulate the ZnO, atom alternating structure and column alternating type IGZO material of ZnO, aerobic vacancy, and compare the energy band structure and the density of states of each kind of material by comparing the energy band structure and the density of states of each kind of material. The effects of various atoms on the band structure and density of states in IGZO materials are obtained. We find that the bottom of the conduction band of IGZO is mainly contributed by the S-orbital electrons of metal atoms, and the most important contribution is the 5s2 orbital of the In atom, while the Ga atom has the ability to inhibit the oxygen vacancy. At the same time, because of the spherical symmetry of In's 5s2 orbit, IGZO material is not sensitive to structural reconstruction. Secondly, we use the TCAD software to simulate the IGZO-TFT based on the density of states model, and compare with the experimental data to verify the correctness of the model. Then we optimize the device. We find that the IGZO-TFT device with active layer thickness of 20 nm, channel length of 30 渭 m and insulation layer thickness of 60nm has good performance. Finally, the actual process structure diagram is given. Finally, we simulate the dual-active layer IGZO-TFT based on the above model, and study the influence of the thickness of the active layer and the interfacial position of the active layer on the performance of the device. Under ideal conditions, we have obtained a high performance device with threshold voltage Vth=-0.89V, sub-threshold swing SS=0.27, switch current ratio Ion/Ioff=6.98 脳 1014. At the same time, we find that the device has the best performance when the interface is located at the edge of the main conductive region.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN321.5
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