【摘要】：隨著社會(huì)的發(fā)展,人們對(duì)信息傳輸和處理的速度提出了越來(lái)越高的要求。傳統(tǒng)的電互連因?yàn)槠涔逃械奈锢砥款i,已經(jīng)不能繼續(xù)適應(yīng)高速信息社會(huì)的發(fā)展。光互連以其抗電磁干擾、大帶寬、高互連密度等優(yōu)勢(shì),成為解決電互連問(wèn)題的最佳途徑。光波導(dǎo)自身可以實(shí)現(xiàn)小半徑彎曲,且容易實(shí)現(xiàn)波分復(fù)用技術(shù),所以波導(dǎo)互連已經(jīng)成為板級(jí)光互連中的一個(gè)主要連接方式。玻璃基光波導(dǎo)具有損耗小、環(huán)境穩(wěn)定性好、易于集成、成本低等優(yōu)勢(shì),因此非常適合板級(jí)光互連中光傳輸層的制作。由于電場(chǎng)輔助離子交換過(guò)程存在熱均勻性問(wèn)題,不適用于大尺寸基片中光波導(dǎo)的制作,所以目前一般都是采用Ag+-Na+熱離子交換的方法。但是這種方法制作的表面光波導(dǎo)因?yàn)槠湔凵渎史植�、表面散射和“銀線”等原因,損耗較大,失去了在板級(jí)光互連制作中的優(yōu)勢(shì)。針對(duì)以上問(wèn)題,本文采用改進(jìn)型K+離子掩膜技術(shù)在玻璃基片上制作了低損耗掩埋型光波導(dǎo),實(shí)驗(yàn)過(guò)程共分為三步:(一)通過(guò)K+-Na+離子交換在玻璃基片表面制作K+離子掩膜層;(二)通過(guò)Ag+-Na+離子交換制作光波導(dǎo)結(jié)構(gòu);(三)通過(guò)Na+-Ag+離子反交換制作掩埋型光波導(dǎo)。經(jīng)過(guò)實(shí)驗(yàn)優(yōu)化,制得的光波導(dǎo)傳輸損耗為0.23dB/cm,耦合損耗為0.23dB。與傳統(tǒng)Ag+-Na+離子交換相比,光波導(dǎo)損耗有大幅度地降低。與電場(chǎng)輔助離子交換相比,插入損耗相近,但制作過(guò)程和設(shè)備大大簡(jiǎn)化,也避免了離子交換過(guò)程中出現(xiàn)的掩埋深度不均勻的現(xiàn)象,因此本文提出的改進(jìn)型K+離子掩膜技術(shù)適用于板級(jí)光互連中光互連層的制作。本文從離子交換的物理機(jī)制出發(fā),結(jié)合實(shí)驗(yàn)相關(guān)參數(shù),針對(duì)改進(jìn)型K+離子掩膜技術(shù)建立了離子交換理論模型,最后通過(guò)實(shí)驗(yàn)驗(yàn)證了理論模型的正確性,為今后的光波導(dǎo)制作提供了一種工具。
[Abstract]:With the development of society, the speed of information transmission and processing has become more and more demanding. Traditional electrical interconnection can not continue to adapt to the development of high-speed information society because of its inherent physical bottleneck. Optical interconnection has become the best way to solve the problem of electrical interconnection because of its advantages of anti-electromagnetic interference, large bandwidth and high interconnection density. The optical waveguide itself can realize small radius bending, and it is easy to realize wavelength division multiplexing technology, so the waveguide interconnection has become a main connection mode in the board-level optical interconnection. Glass-based optical waveguide has the advantages of low loss, good environmental stability, easy integration and low cost, so it is very suitable for the fabrication of optical transmission layer in the board-level optical interconnection. Due to the thermal homogeneity of the field-assisted ion-exchange process, it is not suitable for the fabrication of optical waveguides in large-sized substrates, so the Ag + - Na + thermal ion-exchange method is generally used at present. In view of the above problems, a low loss buried optical waveguide is fabricated on glass substrates by improved K + ion mask technology. The experimental process is divided into three steps: (1) K + ion mask is fabricated on glass substrates by K + - Na + ion exchange; (2) optical waveguides are fabricated by Ag + - Na + ion exchange. (3) The buried waveguide is fabricated by Na + - Ag + ion back-exchange. The transmission loss of the waveguide is 0.23dB/cm and the coupling loss is 0.23dB. Compared with the traditional Ag + - Na + ion exchange, the loss of the optical waveguide is greatly reduced. The improved K + ion mask technology proposed in this paper is suitable for the fabrication of optical interconnection layers in board-level optical interconnections. Based on the physical mechanism of ion exchange and the related experimental parameters, the improved K + ion mask technology is established. The theoretical model of ion exchange is verified by experiments, which provides a tool for fabricating optical waveguides in the future.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN252

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本文編號(hào)：2205397