【摘要】：絕緣柵雙極型晶體管(IGBT)的瞬態(tài)熱阻抗曲線可表征器件的退化狀態(tài),對(duì)器件損傷、壽命預(yù)測(cè)等研究有重大的意義。提出了基于光纖測(cè)溫法測(cè)量瞬態(tài)熱阻抗的方法,可實(shí)時(shí)獲取器件的準(zhǔn)確結(jié)溫,計(jì)算得到的瞬態(tài)熱阻抗曲線能反映器件的退化狀態(tài),更接近器件的實(shí)際熱阻。分別對(duì)用光纖測(cè)量法和熱敏參數(shù)法測(cè)得的瞬態(tài)熱阻抗曲線進(jìn)行比較,證明了光纖測(cè)量方法準(zhǔn)確可行。
[Abstract]:The transient thermal impedance curves of the insulated gate bipolar transistor (IGBT) can characterize the degenerate state of the device, which is of great significance to the study of device damage and life prediction. A method of measuring transient thermal impedance based on optical fiber temperature measurement method is proposed. The accurate junction temperature of the device can be obtained in real time. The calculated transient thermal impedance curve can reflect the degenerate state of the device and is closer to the actual thermal resistance of the device. The transient thermal impedance curves measured by the optical fiber measurement method and the thermal sensitive parameter method are compared respectively. The results show that the optical fiber measurement method is accurate and feasible.
【作者單位】： 河北工業(yè)大學(xué)電氣工程學(xué)院;
【基金】：國(guó)家自然科學(xué)基金(51377044) 2012年度高校博士點(diǎn)專項(xiàng)科研基金(20121317110008)~~
【分類號(hào)】：TN322.8

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