【摘要】：頻率在太赫茲頻段內(nèi)的電磁波（簡(jiǎn)稱太赫茲波）在安保，醫(yī)療和通信等領(lǐng)域內(nèi)有重要應(yīng)用，因此研究在室溫下工作的低成本便攜式太赫茲探測(cè)器具有重要意義。本文研究設(shè)計(jì)了一種基于TSMC180nm CMOS工藝的太赫茲成像檢波單元，它可以用于大規(guī)模成像陣列。檢波單元包括片上太赫茲天線，，基于MOS管的檢波器和阻抗匹配網(wǎng)絡(luò)結(jié)構(gòu)。這種檢波單元具有成本低，體積小，集成度高，一致性強(qiáng)，易于實(shí)現(xiàn)大規(guī)模陣列，可以同數(shù)字處理電路集成等多方面優(yōu)點(diǎn)。 其中片上太赫茲天線采用小環(huán)天線的形式，同時(shí)利用人工磁導(dǎo)體（AMC）提高天線性能。這種天線僅使用了CMOS工藝中的金屬互連線來(lái)實(shí)現(xiàn),因此同傳統(tǒng)的CMOS工藝兼容。天線實(shí)現(xiàn)了3dB的增益，天線的直徑為98微米。本文也提出一種新型人工磁導(dǎo)體的結(jié)構(gòu)，這種結(jié)構(gòu)可以在單位面積上實(shí)現(xiàn)更多的結(jié)構(gòu)單元，并且和CMOS工藝相兼容。 片上太赫茲?rùn)z波器采用MOS管實(shí)現(xiàn)，MOS管溝道中太赫茲波的傳輸具有等離子體波傳輸?shù)奶攸c(diǎn)，利用這一特點(diǎn)可以實(shí)現(xiàn)檢波功能。本文對(duì)MOS管溝道中太赫茲波的傳輸問(wèn)題進(jìn)行數(shù)學(xué)建模，并利用模型的解，結(jié)合TSMC180nm的工藝參數(shù)，設(shè)計(jì)了基于MOS管的太赫茲?rùn)z波器。MOS管溝道的長(zhǎng)為180納米，寬為1微米，理論實(shí)現(xiàn)了88V/W的響應(yīng)率和45nV/√Hz的等效噪聲功率。 天線與MOS管檢波器間的阻抗匹配網(wǎng)絡(luò)完全采用CMOS工藝中的金屬互連線實(shí)現(xiàn)，因此也與CMOS工藝完全兼容。整個(gè)基于CMOS工藝的太赫茲成像檢波單元的響應(yīng)率為160V/W，等效噪聲功率為25nV/√Hz。
[Abstract]:The electromagnetic wave (THz) with frequency in terahertz band has important applications in the fields of security, medical treatment and communication, so it is of great significance to study low-cost portable terahertz detectors operating at room temperature. In this paper, a terahertz imaging detector based on TSMC180nm CMOS process is designed, which can be used in large scale imaging array. The detector unit consists of an on-chip terahertz antenna, a detector based on MOS tube and an impedance matching network structure. The detector has the advantages of low cost, small size, high integration, strong consistency, easy to realize large scale array, and can be integrated with digital processing circuit. The terahertz antenna is a small loop antenna and the artificial magnetic conductor (AMC) is used to improve the antenna performance. The antenna is implemented using only the metal interconnects in the CMOS process and is therefore compatible with the traditional CMOS process. The antenna achieves the gain of 3dB, and the diameter of antenna is 98 渭 m. This paper also presents a new structure of artificial magnetic conductor, which can realize more structural units per unit area and is compatible with CMOS process. The terahertz wave transmission in the channel of the MOS tube has the characteristics of plasma wave transmission, and the detection function can be realized by using the characteristics of the on-chip terahertz detector. In this paper, the transmission problem of terahertz wave in MOS channel is modeled. By using the solution of the model and the technological parameters of TSMC180nm, the length and width of THz geophone. MOS channel based on MOS tube are 180 nm and 1 渭 m, respectively. The responsivity of 88V/W and the equivalent noise power of 45nV/ are realized theoretically. The impedance matching network between antenna and MOS detector is realized by metal interconnection in CMOS process, so it is also compatible with CMOS process. The response rate of the whole terahertz imaging detector based on CMOS process is 160 V / W and the equivalent noise power is 25nV/ Hz.
【學(xué)位授予單位】：北京理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN763.1;TN820

【共引文獻(xiàn)】

相關(guān)期刊論文 前10條

1 蘇同福;于斌;韓鵬昱;李永良;李偉;趙國(guó)忠;宮長(zhǎng)榮;;多壁碳納米管太赫茲圖譜研究[J];光譜學(xué)與光譜分析;2009年11期

2 高飛;陳立群;馮廣智;魯遠(yuǎn)甫;楊s

本文編號(hào)：2164810