193nm投影光刻物鏡光機(jī)系統(tǒng)關(guān)鍵技術(shù)研究進(jìn)展
發(fā)布時(shí)間：2018-07-27 16:14
【摘要】：結(jié)合雙/多曝光的193nm投影光刻是未來5~10年大規(guī)模集成電路工業(yè)化生產(chǎn)的主要方法.投影物鏡作為光刻機(jī)的核心分系統(tǒng),其光機(jī)系統(tǒng)關(guān)鍵技術(shù)的研究進(jìn)展直接影響物鏡整體性能的提升.本文分析了當(dāng)前集成電路裝備制造業(yè)對193nm投影物鏡的需求,闡述了曝光系統(tǒng)設(shè)計(jì)、光學(xué)元件被動支撐、位姿調(diào)節(jié)、主動變形、元件更換和系統(tǒng)數(shù)值孔徑調(diào)節(jié)等物鏡光機(jī)系統(tǒng)關(guān)鍵技術(shù)研究現(xiàn)狀,提煉了阻礙物鏡未來發(fā)展的關(guān)鍵科學(xué)技術(shù)問題.目前,193nm光刻物鏡尚需進(jìn)一步闡明高階熱像差的產(chǎn)生機(jī)理和校正策略,解決多自由度位姿標(biāo)定問題,形成完備的物鏡研制方法,指導(dǎo)高成像質(zhì)量物鏡的制造.
[Abstract]:Double / multi-exposure 193nm projection lithography is the main method for industrial production of LSI in the next 5 ~ 10 years. As the core subsystem of lithography system, the research progress of the key technology of projection objective system directly affects the improvement of the overall performance of the objective lens. This paper analyzes the demand of the current IC equipment manufacturing industry for 193nm projection objective lens, and expounds the design of exposure system, passive support of optical elements, position and pose adjustment, active deformation, etc. The research status of the key technologies of the objective lens system, such as element replacement and system numerical aperture adjustment, is presented, and the key scientific and technological problems hindering the future development of the objective lens are refined. At present, it is necessary to further clarify the mechanism and correction strategy of high-order thermal aberration, to solve the problem of multi-degree-of-freedom position calibration, to form a complete objective lens development method, and to guide the manufacture of high imaging quality objective lens.
【作者單位】： 中國科學(xué)院長春光學(xué)精密機(jī)械與物理研究所應(yīng)用光學(xué)國家重點(diǎn)實(shí)驗(yàn)室超精密光學(xué)工程研究中心;中國科學(xué)院大學(xué);
【基金】：國家自然科學(xué)基金(批準(zhǔn)號:61504142) 國家科技重大專項(xiàng)基金(批準(zhǔn)號:2009ZX02205)資助項(xiàng)目
【分類號】：TN305.7
本文編號：2148383
[Abstract]:Double / multi-exposure 193nm projection lithography is the main method for industrial production of LSI in the next 5 ~ 10 years. As the core subsystem of lithography system, the research progress of the key technology of projection objective system directly affects the improvement of the overall performance of the objective lens. This paper analyzes the demand of the current IC equipment manufacturing industry for 193nm projection objective lens, and expounds the design of exposure system, passive support of optical elements, position and pose adjustment, active deformation, etc. The research status of the key technologies of the objective lens system, such as element replacement and system numerical aperture adjustment, is presented, and the key scientific and technological problems hindering the future development of the objective lens are refined. At present, it is necessary to further clarify the mechanism and correction strategy of high-order thermal aberration, to solve the problem of multi-degree-of-freedom position calibration, to form a complete objective lens development method, and to guide the manufacture of high imaging quality objective lens.
【作者單位】： 中國科學(xué)院長春光學(xué)精密機(jī)械與物理研究所應(yīng)用光學(xué)國家重點(diǎn)實(shí)驗(yàn)室超精密光學(xué)工程研究中心;中國科學(xué)院大學(xué);
【基金】：國家自然科學(xué)基金(批準(zhǔn)號:61504142) 國家科技重大專項(xiàng)基金(批準(zhǔn)號:2009ZX02205)資助項(xiàng)目
【分類號】：TN305.7
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