界面調(diào)控對(duì)有機(jī)光電探測(cè)器性能改善研究
發(fā)布時(shí)間：2018-07-21 19:04
【摘要】：有機(jī)光電探測(cè)器(OPD,Organic photodetector)作為一類(lèi)重要的光電器件,由于它具有優(yōu)秀的機(jī)械靈活性,生產(chǎn)成本較低,材料選擇多樣廣泛等優(yōu)勢(shì)已經(jīng)吸引了很多研究學(xué)者的關(guān)注和研究,其中研究較多的有對(duì)OPD的電荷傳輸特性、界面調(diào)控對(duì)器件性能的提高。為了提高OPD的性能,除了要選擇好高吸收率、高載流子遷移率的給受體材料,還需要保證載流子在傳輸中具有低的能量勢(shì)壘。當(dāng)給受體材料界面出現(xiàn)能帶彎曲,形成了界面偶極子時(shí),對(duì)有機(jī)材料之間的能量勢(shì)壘也有很大影響。OPD器件關(guān)注暗電流、光暗電流比等參數(shù),OPD器件的暗電流越小越好,光暗電流比越大越好。為了減小OPD器件的暗電流,可以通過(guò)d{雜的方法來(lái)提高器件中薄膜的電阻率,從而減少器件的暗電流,提高器件的光暗電流比。本論文的主要內(nèi)容包括兩大部分,具體如下:第一部分研究了摻雜調(diào)控ZnO納米棒/PVK界面提高紫外光電探測(cè)器的性能。通過(guò)在ZnO中d{雜不同濃度的Al制備成AZO薄膜,運(yùn)用XRD、PL等表征手段對(duì)不同Al濃度的AZO薄膜進(jìn)行表征,得出增加Al的濃度使薄膜的結(jié)晶質(zhì)量變差,使薄膜的電阻增加。然后制備出了有機(jī)無(wú)機(jī)復(fù)合的ZnO/PVK基紫外探測(cè)器,其中ZnO納米顆粒采用溶膠-凝膠法制備,ZnO納米棒陣列采用水熱法制備。把不同Al濃度的AZO薄膜應(yīng)用于ZnO/PVK基紫外探測(cè)器中,減少了器件的暗電流,從而提高器件的光暗電流比,提高器件的性能,并通過(guò)測(cè)試器件的吸收光譜、J-V曲線(xiàn)、EQE光譜研究其對(duì)器件性能的改善。當(dāng)d{雜Al濃度為10at%時(shí),在-5V偏壓下和365nm、2mW/cm2的紫外光光照下ZnO/PVK基紫外探測(cè)器的光暗電流比達(dá)到了103量級(jí),器件的暗電流密度達(dá)到了17.2μA/cm2,響應(yīng)度達(dá)到了9.25A/W。第二部分研究了多層DCJTB/C60界面對(duì)有機(jī)近紅外探測(cè)器性能的影響。利用真空蒸鍍的方法制備器件,通過(guò)改變DCJTB/C60的層數(shù)來(lái)優(yōu)化探測(cè)器的性能,器件在擁有3層DCJTB/C60薄膜時(shí)擁有較好的性能,在-1V偏壓下980nm近紅外激光器照射下,器件的光電流密度達(dá)到0.18A/cm2。利用UPS、XPS等表征手段研究發(fā)現(xiàn)在DCJTB/C60界面層發(fā)生了能帶彎曲,形成了界面偶極子,并研究了多層DCJTB/C60的有機(jī)近紅外探測(cè)器的工作機(jī)制。
[Abstract]:OPD (Organic photodetector), as an important type of photoelectric device, has attracted many researchers' attention and research because of its excellent mechanical flexibility, low production cost and wide selection of material, which has a lot of research on the charge transmission characteristics of OPD and interface control to the device. In order to improve performance, in order to improve the performance of OPD, in addition to the choice of high absorptivity and high carrier mobility to the receptor material, it is necessary to ensure that the carrier has a low energy barrier in the transmission. When the interface of the receptor appears to bend and forms the interface dipole, it also has a great influence on the energy barrier between the organic materials. OPD devices focus on dark current, light dark current ratio and other parameters. The smaller the dark current is, the better the dark current, the better the dark current ratio. In order to reduce the dark current of the OPD device, the resistivity of the thin film in the device can be improved by the d{hybrid method, thus reducing the dark current of the device and raising the light dark current ratio of the devices. The main contents of this paper are the main contents of this paper. The two major parts are as follows: in the first part, the properties of UV photodetectors are improved by doping control ZnO nanorods /PVK interface. AZO thin films are prepared by Al with different concentrations of d{in ZnO. The AZO thin films with different Al concentrations are characterized by XRD, PL and so on. It is concluded that increasing Al concentration makes the crystalline quality of the thin film worse. The resistance of the film is increased. Then the ZnO/PVK based UV detector of organic and inorganic composite is prepared, in which the ZnO nanoparticles are prepared by the sol-gel method and the ZnO nanorod array is prepared by hydrothermal method. The AZO thin films with different Al concentrations are applied to the ZnO/PVK based UV detector to reduce the dark current of the device and thus improve the device. Light dark current ratio, improve the performance of the device, and through the absorption spectrum of the test device, J-V curve, EQE spectrum to study the improvement of the device performance. When the d{Al concentration is 10at%, under -5V bias and 365nm, 2mW/cm2's ultraviolet light ultraviolet detector, the light dark current ratio of the ZnO/PVK based ultraviolet detector reaches 103, the dark current density of the device reaches The response degree is 17.2 A/cm2, and the response degree is 9.25A/W. second. The effect of multilayer DCJTB/C60 interface on the performance of organic near infrared detector is studied. The device is prepared by vacuum evaporation. The performance of the detector is optimized by changing the number of DCJTB/C60 layers. The device has better performance when it has 3 layers of DCJTB/C60 film, and the -1V bias voltage is applied to the device. Under the irradiation of the lower 980nm near infrared laser, the photocurrent density of the device reaches 0.18A/cm2. by means of UPS, XPS and other characterization methods. It is found that the band bending in the DCJTB/C60 interface is formed, and the interface dipole is formed, and the working mechanism of the organic near infrared detector of multi-layer DCJTB/C60 is studied.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN15
本文編號(hào)：2136531
[Abstract]:OPD (Organic photodetector), as an important type of photoelectric device, has attracted many researchers' attention and research because of its excellent mechanical flexibility, low production cost and wide selection of material, which has a lot of research on the charge transmission characteristics of OPD and interface control to the device. In order to improve performance, in order to improve the performance of OPD, in addition to the choice of high absorptivity and high carrier mobility to the receptor material, it is necessary to ensure that the carrier has a low energy barrier in the transmission. When the interface of the receptor appears to bend and forms the interface dipole, it also has a great influence on the energy barrier between the organic materials. OPD devices focus on dark current, light dark current ratio and other parameters. The smaller the dark current is, the better the dark current, the better the dark current ratio. In order to reduce the dark current of the OPD device, the resistivity of the thin film in the device can be improved by the d{hybrid method, thus reducing the dark current of the device and raising the light dark current ratio of the devices. The main contents of this paper are the main contents of this paper. The two major parts are as follows: in the first part, the properties of UV photodetectors are improved by doping control ZnO nanorods /PVK interface. AZO thin films are prepared by Al with different concentrations of d{in ZnO. The AZO thin films with different Al concentrations are characterized by XRD, PL and so on. It is concluded that increasing Al concentration makes the crystalline quality of the thin film worse. The resistance of the film is increased. Then the ZnO/PVK based UV detector of organic and inorganic composite is prepared, in which the ZnO nanoparticles are prepared by the sol-gel method and the ZnO nanorod array is prepared by hydrothermal method. The AZO thin films with different Al concentrations are applied to the ZnO/PVK based UV detector to reduce the dark current of the device and thus improve the device. Light dark current ratio, improve the performance of the device, and through the absorption spectrum of the test device, J-V curve, EQE spectrum to study the improvement of the device performance. When the d{Al concentration is 10at%, under -5V bias and 365nm, 2mW/cm2's ultraviolet light ultraviolet detector, the light dark current ratio of the ZnO/PVK based ultraviolet detector reaches 103, the dark current density of the device reaches The response degree is 17.2 A/cm2, and the response degree is 9.25A/W. second. The effect of multilayer DCJTB/C60 interface on the performance of organic near infrared detector is studied. The device is prepared by vacuum evaporation. The performance of the detector is optimized by changing the number of DCJTB/C60 layers. The device has better performance when it has 3 layers of DCJTB/C60 film, and the -1V bias voltage is applied to the device. Under the irradiation of the lower 980nm near infrared laser, the photocurrent density of the device reaches 0.18A/cm2. by means of UPS, XPS and other characterization methods. It is found that the band bending in the DCJTB/C60 interface is formed, and the interface dipole is formed, and the working mechanism of the organic near infrared detector of multi-layer DCJTB/C60 is studied.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN15
【參考文獻(xiàn)】
相關(guān)期刊論文 前1條
1 宋詞,杭寅,徐軍;氧化鋅晶體的研究進(jìn)展[J];人工晶體學(xué)報(bào);2004年01期
，本文編號(hào)：2136531
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