本文選題：MOCVD + 在線監(jiān)測　； 參考：《應用光學》2017年04期

【摘要】：根據(jù)金屬有機物化學氣相沉積(MOCVD)在線紅外測溫的發(fā)展需要,提出一種3波長免探測孔有效面積校準和反射率修正的測溫方法。給出了探測1 300nm、1 150nm、940nm 3波長的在線測溫探頭設計方案和光路圖,將該探頭應用于THOMAS SWAN CCS MOCVD 5.08cm(2英寸)Si(111)襯底上生長10μm GaN外延層的在線測溫。測量結果表明:在700℃~1 100℃范圍內(nèi),探頭多次測量的重復性誤差在1.0℃內(nèi),在950℃~1 100℃范圍內(nèi),以EpiTT紅外測溫儀為參考,探頭測溫精度在1℃內(nèi),距離容差性為2mm。該探頭應用于我國自主研發(fā)的MOCVD 5.08cm Si(111)襯底上生長InGaN/GaN MQW結構藍光LED外延片,可得最低測溫量程為435℃,nGaN生長過程中測量噪聲為0.75℃。結果分析表明:該3波長免修正在線紅外測溫法對于高質(zhì)量單層薄膜外延生長具有一定可行性,對于多層復雜結構外延生長需要進一步改進。
[Abstract]:According to the development needs of metal organic chemical vapor deposition (MOCVD) on line infrared temperature measurement, a temperature measurement method with three wavelengths without detection hole effective area calibration and reflectivity correction is proposed. In this paper, the design scheme and optical circuit diagram of the on-line temperature measurement probe for detecting the wavelength of 1 300 nm ~ (-1) 150 nm ~ (-1) nm are presented. The probe is applied to the measurement of the temperature of 10 渭 m gan epitaxial layer grown on the THOMAS Swan CCS MOCVD 5.08cm (2 inch) Si (111) substrate. The results show that in the range of 700 鈩，

本文編號：2109571