本文選題：微波單片集成電路(MMIC) + X波段��； 參考：《半導體技術》2016年05期

【摘要】：基于0.25μm Ga As贗配高電子遷移率晶體管(PHEMT)工藝研制了一款可工作在脈沖和連續(xù)波條件下的X波段高性能大功率放大器(HPA)。根據Ga As材料的導熱特性和熱分布特點,設計了能夠在連續(xù)波條件下工作的功率器件,并提取了器件的EEHEMT可定標模型參數。HPA原理圖設計采用低損耗高效率母線拓撲結構,并基于最優(yōu)效率原則優(yōu)化了HPA各級阻抗匹配參數。對HPA容易出現(xiàn)的幾種穩(wěn)定性問題進行了分析,并在設計過程中采取了相應的防范措施。采用電磁場仿真技術優(yōu)化設計的HPA芯片尺寸為3.5 mm×4.0 mm。在柵源電壓為-0.7 V,漏源電壓為8 V,工作頻率為9~10 GHz的條件下,連續(xù)波輸出功率達到12 W以上,功率附加效率大于45%,在9.6 GHz時功率附加效率達到50%。
[Abstract]:Based on 0.25 渭 m GaAs pseudo-electron mobility transistor (pHEMT) process, an X-band high power amplifier (HPA) operating under pulse and continuous wave conditions has been developed. According to the characteristics of thermal conductivity and thermal distribution of GaAs materials, a power device which can work under continuous wave condition is designed. The EEHEMT scalable model parameters. HPA schematic diagram is designed with low loss and high efficiency bus topology. Based on the principle of optimal efficiency, the impedance matching parameters of HPA are optimized. Several stability problems of HPA are analyzed, and the corresponding preventive measures are taken in the design process. The size of HPA chip is 3.5 mm 脳 4.0 mm. When the gate source voltage is -0.7 V, the drain source voltage is 8 V and the operating frequency is 9 ~ 10 GHz, the output power of the continuous wave is more than 12 W, the additional power efficiency is more than 450.The additional efficiency of power is 50 at 9.6 GHz.
【作者單位】： 中國電子科技集團公司第十三研究所;
【分類號】：TN722.75
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本文編號：2106985