本文選題：高純硅 + 金屬雜質(zhì)��； 參考：《質(zhì)譜學(xué)報(bào)》2016年01期

【摘要】：高純硅廣泛應(yīng)用于光伏產(chǎn)業(yè)與電子信息產(chǎn)業(yè),其中雜質(zhì)的種類與含量是影響其性能的重要指標(biāo)。根據(jù)雜質(zhì)的不同屬性,對(duì)高純硅中雜質(zhì)的質(zhì)譜及非質(zhì)譜分析測(cè)定方法進(jìn)行了分類與綜述,分析了各種方法的優(yōu)缺點(diǎn)及應(yīng)用現(xiàn)狀。金屬雜質(zhì)元素的測(cè)定方法主要有輝光放電質(zhì)譜法(GDMS)、電感耦合等離子體質(zhì)譜法(ICP-MS)、二次離子質(zhì)譜法(SIMS)等質(zhì)譜分析方法,以及原子光譜法、中子活化分析法等非質(zhì)譜分析方法;非金屬雜質(zhì)元素的測(cè)定方法主要有二次離子質(zhì)譜法、氣體提取-專用測(cè)定法等非質(zhì)譜分析方法。對(duì)于高純硅純度分析,質(zhì)譜和非質(zhì)譜分析方法分別在金屬雜質(zhì)元素和非金屬雜質(zhì)元素的測(cè)定方面顯示出優(yōu)勢(shì)。
[Abstract]:High purity silicon is widely used in photovoltaic industry and electronic information industry. According to the different properties of impurities, the mass spectrometry and non-mass spectrometry analysis methods of impurities in high-purity silicon are classified and summarized. The advantages and disadvantages of these methods and their application status are analyzed. The main methods for the determination of metal impurity elements are glow discharge mass spectrometry (GDMS), inductively coupled plasma mass spectrometry (ICP-MS), secondary ion mass spectrometry (Sims), and non-mass spectrometry, such as atomic spectroscopy and neutron activation analysis. The determination methods of nonmetallic impurity elements mainly include secondary ion mass spectrometry, gas extraction-specific determination and other non-mass spectrometry analysis methods. For the purity analysis of high purity silicon, mass spectrometry and non-mass spectrometry methods show advantages in the determination of metal impurity elements and nonmetallic impurity elements, respectively.
【作者單位】： 中國原子能科學(xué)研究院;中國計(jì)量科學(xué)研究院;華潤(集團(tuán))有限公司;
【基金】：國家科技支撐計(jì)劃課題:無機(jī)純物質(zhì)純度溯源研究與基標(biāo)準(zhǔn)研制(2013BAK12B02)資助
【分類號(hào)】：TN304.12;O657.63

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本文編號(hào)：2071018