發(fā)布時間：2018-06-19 00:51

  本文選題：浸沒式光刻 + 浸沒單元回收結(jié)構(gòu)�。� 參考：《浙江大學(xué)》2017年碩士論文

【摘要】：浸沒式光刻作為45nm以下應(yīng)用最廣的光刻技術(shù),如何滿足浸沒式光刻高生產(chǎn)率的要求,提高浸沒式光刻的掃描速度,是目前浸沒式光刻的核心問題。投影物鏡和硅片縫隙間的流場在高速掃描運動下的密封性和穩(wěn)定性限制了浸沒式光刻機的產(chǎn)率和良品率。安裝在投影物鏡和硅片間的浸沒單元的回收單元在回收負(fù)壓的作用下增強對浸沒液體的束縛能力,是保證浸沒流場的更新、硅片和物鏡之.間縫隙的密封的關(guān)鍵技術(shù)。通過優(yōu)化浸沒單元回收結(jié)構(gòu)可以顯著提高流場內(nèi)流體的密封和穩(wěn)定,從而提高浸沒式光刻的掃描速度,本文以浸沒單元回收單元中的回收結(jié)構(gòu)為研究對象,完成了以下工作:(1)回收結(jié)構(gòu)的基礎(chǔ)理論研究及對比仿真。建立了與浸沒單元回收結(jié)構(gòu)相似的回收孔模型,從回收孔模型中提取出影響臨界掃描速度的4個主要設(shè)計參數(shù),通過對4個主要設(shè)計參數(shù)的基礎(chǔ)理論研究和數(shù)值對比仿真,得到能夠提高浸沒單元掃描速度的回收孔結(jié)構(gòu)。(2)優(yōu)化回收結(jié)構(gòu)的實驗方案研究。在回收小孔模型的基礎(chǔ)上,設(shè)計了回收孔主要設(shè)計參數(shù)的參數(shù)對比實驗方案,并根據(jù)浸沒單元的實際需求設(shè)計了一系列的參量,最后將這些參量按照正交實驗法設(shè)計實驗方案。(3)回收結(jié)構(gòu)的優(yōu)化實驗研究。設(shè)計了更易于實驗的回收小孔模型并搭建了相應(yīng)的測試平臺,得到不同的回收孔結(jié)構(gòu)在相同實驗條件下的重復(fù)性實驗結(jié)果,然后按照正交實驗結(jié)果分析方法得出在六種不同的實驗條件下的臨界掃描速度最高的回收孔結(jié)構(gòu)。(4)最后將從回收小孔模型中得到的最優(yōu)的回收孔結(jié)構(gòu)參數(shù)應(yīng)用到浸沒單元的回收單元中,優(yōu)化浸沒單元回收單元的回收結(jié)構(gòu),提高浸沒式光刻的掃描速度。
[Abstract]:As the most widely used lithography technology under 45nm, immersion lithography is the most widely used lithography. How to meet the high productivity of immersion lithography and improve the scanning speed of immersion lithography is the core problem of immersion lithography. The sealing and stability of the flow field between the projection lens and silicon wafer in the high-speed scanning motion limits the immersion lithography. The yield and good rate. The recovery unit installed between the projection lens and the silicon wafer can enhance the binding capacity to the submerged liquid under the effect of the negative pressure. It is the key technology to ensure the updating of the submerged flow field and the seal of the gap between the silicon chip and the objective lens. The flow internal flow can be significantly improved by the optimization of the recovery structure of the immersion unit. The sealing and stability of the body can improve the scanning speed of the immersion lithography. In this paper, the recovery structure in the recovery unit of the immersion unit is taken as the research object. The following work has been completed: (1) the basic theoretical research and comparison simulation of the recovery structure. A recovery hole model similar to the recovery structure of the immersion unit is established and extracted from the recovery hole model. 4 main design parameters affecting the critical scanning speed are obtained. Through the basic theory research and numerical simulation of 4 main design parameters, the recovery hole structure which can improve the scanning speed of the immersion unit is obtained. (2) the experimental scheme for optimizing the recovery structure is studied. On the basis of the recovery of the small hole mold type, the main design parameters of the recovery hole are designed. A series of parameters are designed according to the actual requirements of the immersion unit. Finally, the parameters are designed by the orthogonal experimental method. (3) the experimental research on the optimization of the recovery structure is carried out. A more easy to experiment reclaim hole model is designed and the corresponding test platform is set up to get different recovery holes structure. The results of repeated experiment under the same experimental conditions, and then according to the orthogonal experimental results analysis method to obtain the maximum critical scanning speed of the recovery hole structure under six different experimental conditions. (4) finally, the optimum recovery hole structure parameters obtained from the recovery small hole model are applied to the recovery unit of the immersion unit. The recovery structure of the immersion unit recovery unit improves the scanning speed of immersion lithography.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN305.7

【參考文獻(xiàn)】

相關(guān)期刊論文 前9條

1 許玉;方賢德;張宏剛;蘇向輝;;管內(nèi)兩相流摩擦壓力損失計算研究進(jìn)展[J];流體機械;2012年05期

2 趙金余;陳暉;傅新;;光刻機浸沒單元結(jié)構(gòu)參數(shù)對流動狀態(tài)的影響[J];機電工程;2011年05期

3 傅新;陳暉;陳文昱;陳穎;;光刻機浸沒液體控制系統(tǒng)的研究現(xiàn)狀及進(jìn)展[J];機械工程學(xué)報;2010年16期

4 Laura Peters;;清除浸沒式光刻缺陷[J];集成電路應(yīng)用;2007年07期

5 袁瓊雁;王向朝;;國際主流光刻機研發(fā)的最新進(jìn)展[J];激光與光電子學(xué)進(jìn)展;2007年01期

6 王曉東,彭曉峰,王補宣;動態(tài)濕潤與動態(tài)接觸角研究進(jìn)展[J];應(yīng)用基礎(chǔ)與工程科學(xué)學(xué)報;2003年04期

7 李艷秋;下一代曝光(NGL)技術(shù)的現(xiàn)狀和發(fā)展趨勢[J];微納電子技術(shù);2003年Z1期

8 王建軍,李其漢,陸明萬;自由液面流體流動問題的數(shù)值分析研究[J];計算力學(xué)學(xué)報;2003年01期

9 汪勁松,朱煜;我國“十五”期間IC制造裝備的發(fā)展戰(zhàn)略研究[J];機器人技術(shù)與應(yīng)用;2002年02期

相關(guān)博士學(xué)位論文 前1條

1 陳暉;浸沒式光刻機浸液流動特性及其對物鏡影響[D];浙江大學(xué);2011年

相關(guān)碩士學(xué)位論文 前2條

1 童章進(jìn);負(fù)壓回收結(jié)構(gòu)在非接觸式流場密封中的應(yīng)用[D];浙江大學(xué);2015年

2 陳煜;浸沒式光刻中流場的分析與仿真[D];哈爾濱工業(yè)大學(xué);2013年

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