本文選題：硅微納異質(zhì)結(jié) + 石墨烯/硅錐��； 參考：《合肥工業(yè)大學(xué)》2017年碩士論文

【摘要】：硅基光電器件由于易與微電子工藝相結(jié)合、成本低廉等優(yōu)點(diǎn),在芯片集成化以及光控氣體傳感器方面具有重要的研究意義和應(yīng)用價(jià)值。通過在硅表面引入微納結(jié)構(gòu),可有效提高硅的光吸收能力,增大其表面積。本論文制備了兩種微納結(jié)構(gòu)的硅材料——硅錐與黑硅,分別構(gòu)建石墨烯/硅錐和ZnO納米棒/黑硅異質(zhì)結(jié),探索其在光電探測(cè)和氣敏領(lǐng)域的應(yīng)用,取得的主要成果如下:1.利用堿法刻蝕制備金字塔形硅錐陣列,通過控制刻蝕液濃度可調(diào)控硅錐尺寸。吸收譜和光學(xué)模擬顯示隨著硅錐尺寸的減小,硅錐的吸收率和表面光電流密度得到大幅提高。2.石墨烯/硅錐異質(zhì)結(jié)的整流比約為1.5X104,低理想因子1.66,對(duì)近紅外波長光反應(yīng)靈敏,開關(guān)比約為104。且高頻率(2000 Hz)光照下依然保持快速光響應(yīng),上升下降時(shí)間分別為96μs和160 μs。3.通過銀離子輔助刻蝕硅錐制備得到黑硅,其吸收率相比于平面硅提升了73%。采用低溫水溶液法,在黑硅上合成六方纖鋅礦結(jié)構(gòu)ZnO納米棒陣列。通過改變?yōu)趼逋衅泛土舷跛徜\的比例,可控制ZnO納米棒直徑(100-300 nm)。4. ZnO納米棒/黑硅異質(zhì)結(jié)的整流比為20,理想因子為15.13。紫外光照下光響應(yīng)速度為34 ms和18 ms。黑硅的多孔形貌和ZnO的納米尺寸使得異質(zhì)結(jié)比表面積大幅增加,在室溫即顯示出靈敏的氣體探測(cè)性質(zhì)。
[Abstract]:Silicon based optoelectronic devices are of great significance and application value in chip integration and optically controlled gas sensors due to their advantages such as easy combination with microelectronic technology and low cost. The light absorption ability and surface area of silicon can be improved effectively by introducing micro-nano structure on the surface of silicon. In this thesis, two kinds of silicon materials with micro and nano structure, silicon cone and black silicon, were prepared, and graphene / silicon cone and ZnO nanorod / black silicon heterojunction were constructed, and their applications in photoelectric detection and gas sensing were explored. The main results are as follows: 1. Pyramidal silicon cone arrays were fabricated by alkali etching. The size of silicon cones can be controlled by controlling the etching solution concentration. Absorption spectra and optical simulation show that the absorption rate and surface photocurrent density of silicon cone increase significantly with the decrease of silicon cone size. The rectifying ratio of graphene / silicon cone heterojunction is about 1.5 X 104, and the low ideal factor is 1.66. It is sensitive to near infrared wavelength light reaction and the switching ratio is about 104. And the fast light response was maintained under high frequency (2000 Hz) illumination, and the rising and falling time were 96 渭 s and 160 渭 s 路s ~ (-3), respectively. Black silicon was prepared by silver ion assisted etching of silicon cone. The absorptivity of black silicon was 73% higher than that of planar silicon. ZnO nanorod arrays with hexagonal wurtzite structure were synthesized on black silicon by low temperature aqueous solution method. The diameter of ZnO nanorods can be controlled by changing the ratio of urotropine and zinc nitrate hexahydrate. The rectifying ratio of ZnO nanorod / black silicon heterojunction is 20 and the ideal factor is 15.13. The photoresponse velocities under UV irradiation are 34 Ms and 18 Ms respectively. The porous morphology of black silicon and the nanometer size of ZnO greatly increase the specific surface area of heterojunction and show sensitive gas detection properties at room temperature.
【學(xué)位授予單位】：合肥工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN15

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