本文選題：HVPE反應(yīng)器 + GaN�。� 參考：《人工晶體學(xué)報(bào)》2017年04期

【摘要】：在氫化物氣相外延(HVPE)生長(zhǎng)GaN厚膜中,反應(yīng)腔壁面總會(huì)產(chǎn)生大量的寄生沉積,嚴(yán)重影響薄膜生長(zhǎng)速率及質(zhì)量。本文針對(duì)自制的大尺寸垂直式HVPE反應(yīng)器,通過(guò)數(shù)值模擬與實(shí)驗(yàn)對(duì)比,研究了反應(yīng)腔壁面沉積以及GaN生長(zhǎng)速率的分布規(guī)律,特別是寄生沉積分布與載氣流量的關(guān)系。研究發(fā)現(xiàn):在基準(zhǔn)條件下,頂壁寄生沉積速率由中心向邊緣逐漸降低,與實(shí)驗(yàn)結(jié)果吻合;側(cè)壁沉積出現(xiàn)8個(gè)高寄生沉積區(qū)域,對(duì)應(yīng)噴頭邊緣處排布的GaCl管,說(shuō)明沉積主要取決于GaCl的濃度輸運(yùn);模擬得出的石墨托表面生長(zhǎng)速率低于實(shí)驗(yàn)速率,但趨勢(shì)一致。保持其他條件不變,增大NH_3管載氣N_2流量,頂壁和側(cè)壁的寄生沉積速率及分布區(qū)域均隨之增大,石墨托表面生長(zhǎng)速率隨之減小而均勻性卻隨之提高;增大GaCl管載氣N_2流量,頂壁和側(cè)壁的寄生沉積速率及分布區(qū)域均隨之減小,石墨托表面生長(zhǎng)速率隨之增大而均勻性卻隨之降低。研究結(jié)果為大尺寸HVPE反應(yīng)器生長(zhǎng)GaN的工藝優(yōu)化提供了理論依據(jù)。
[Abstract]:In GaN thick films grown by hydride vapor phase epitaxy (HvE), a large amount of parasitic deposition always occurs on the wall of the reaction cavity, which seriously affects the growth rate and quality of the films. In this paper, the distribution law of reaction chamber wall deposition and GaN growth rate, especially the relationship between parasitic deposition distribution and carrier gas flow rate, is studied by numerical simulation and experimental comparison for a large scale vertical HVPE reactor. It is found that the parasitic deposition rate of the parietal wall decreases gradually from the center to the edge under the reference condition, which coincides with the experimental results. There are eight high parasitic deposition areas on the lateral wall, corresponding to the GaCl tube arranged at the edge of the nozzle. The results show that the deposition mainly depends on the transport of GaCl concentration, and the simulated growth rate of graphite base surface is lower than the experimental rate, but the trend is consistent. Keeping the other conditions unchanged, the parasitic deposition rate and distribution area of the top wall and side wall increase with increasing the flow rate of NH_3 tube carrier gas, and the surface growth rate of graphite support decreases, but the uniformity increases, and the flow rate of GaCl tube carrier gas increases with the increase of the flow rate of GaCl tube carrier gas N2. The parasitic deposition rate and distribution area of the top wall and lateral wall decrease, while the growth rate of graphite base surface increases and the uniformity decreases. The results provide a theoretical basis for the process optimization of GaN growth in a large scale HVPE reactor.
【作者單位】： 江蘇大學(xué)能源與動(dòng)力工程學(xué)院;東莞中鎵半導(dǎo)體科技有限公司;
【基金】：國(guó)家自然科學(xué)基金(61474058);國(guó)家自然科學(xué)基金重大儀器裝備專(zhuān)項(xiàng)(61327801) 江蘇省普通高校研究生科研創(chuàng)新計(jì)劃項(xiàng)目(CXLX11_057) 國(guó)家高技術(shù)研究發(fā)展計(jì)劃(2014AA032605) “廣東特支計(jì)劃”科技青年拔尖人才項(xiàng)目(510264251033)
【分類(lèi)號(hào)】：TN304.2
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本文編號(hào)：1939620