本文選題：微波單片集成電路 + Ga　； 參考：《西安電子科技大學》2015年碩士論文

【摘要】：微電子技術的發(fā)展水平和規(guī)模是衡量一個國家技術實力的重要標志。隨著世界科學技術的發(fā)展,半導體技術一直的不斷發(fā)展,有著高頻特性、功率特性和低噪聲特性等優(yōu)點的微波單片集成電路(MMIC)因而得到廣泛應用。微波單片集成電路是微波和毫米波通信、測繪等系統(tǒng)的核心元件。微波功率放大器在衛(wèi)星通信、雷達、電子對抗等領域有著廣泛的應用,MMIC微波功放的設計技術屬于電子對抗的前沿技術之一。在現(xiàn)代無線通訊系統(tǒng)中,功率放大器起著非常重要的作用。新一代商用和軍用通信系統(tǒng)都需要功率放大器。新興的商業(yè)無線應用顯著的提升了對功率放大器的研發(fā)。功率放大器在雷達和通信系統(tǒng)中是最重要的組成部分之一,砷化銦鎵、砷化鎵晶體管(p HEMT)具有高功率密度、高增益,這對于要求高效率,高功率,寬帶操作,以及小尺寸如活性相雷達,未來的蜂窩,本地多點分配業(yè)務應用的優(yōu)勢(LMDS)和衛(wèi)星通信來說是非常理想的應用材料,。單片微波集成電路(MMIC),用于功率放大器與多級結構的放大器制造可以進一步減小芯片尺寸,并增加了小信號增益,以減少制造成本。本論文題目是“Ga As基MMIC功率放大器的研制”,主要設計的是9.5-13.3GHz Ga As基MMIC功率放大器芯片。具體研究內容摘要如下:1.簡單介紹了MMIC的發(fā)展背景、國內與國外的研究發(fā)展,功率放大器的性能參數(shù)與技術指標。2.通過對砷化鎵贗配高電子遷移率晶體管器件的工作原理的分析,同時介紹了其簡單的工藝流程,并對其小信號狀態(tài)下的等效電路模型中的各項參數(shù)的提取辦法進行簡單陳述。3.針對單片微波集成電路中的各類無源元件,詳細分析了它的等效電路模型及其各項技術指標的物理意義。4.介紹了功率放大器的基本設計思想,介紹了功率放大器芯片的探針臺圓片測試和載體測試,給出了測試結果。
[Abstract]:The development level and scale of microelectronics technology is an important symbol to measure a country's technological strength. With the development of science and technology in the world, semiconductor technology has been continuously developed. Microwave monolithic integrated circuits (MMIC) with the advantages of high frequency characteristics, power characteristics and low noise characteristics have been widely used. Microwave monolithic integrated circuit is the core component of microwave and millimeter wave communication, mapping and other systems. Microwave power amplifier has been widely used in satellite communication, radar, electronic countermeasure and other fields. The design technology of MMIC microwave power amplifier is one of the frontier technologies of electronic countermeasure. Power amplifiers play a very important role in modern wireless communication systems. A new generation of commercial and military communication systems require power amplifiers. Emerging commercial wireless applications have significantly improved the development of power amplifiers. Power amplifiers are one of the most important components in radar and communication systems. InGaAs, gallium arsenide transistors (gallium arsenide transistors) have high power density and high gain, which requires high efficiency, high power and wide band operation. As well as small size such as active phase radar, future cellular, local multi-point distribution service applications advantage LMDS) and satellite communications are very ideal materials for applications. Monolithic microwave integrated circuit (MMIC) is used to fabricate power amplifier and multistage amplifier, which can further reduce the chip size and increase the small signal gain to reduce the manufacturing cost. The topic of this thesis is "Fabrication of GaAs based MMIC Power Amplifier", which is mainly designed for 9.5-13.3GHz GaAs based MMIC Power Amplifier chip. The specific contents of the study are summarized as follows: 1: 1. The development background of MMIC, the research and development at home and abroad, the performance parameters and technical index of power amplifier. Based on the analysis of the working principle of GaAs pseudo-electron mobility transistor device, the simple technological process is introduced, and the extraction method of the parameters in the equivalent circuit model under the small signal state is described briefly. Aiming at all kinds of passive components in monolithic microwave integrated circuit, the equivalent circuit model and the physical significance of each technical index are analyzed in detail. The basic design idea of power amplifier is introduced in this paper. The probe chip and carrier test of power amplifier chip are introduced, and the test results are given.
【學位授予單位】：西安電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN722.75

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