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化學(xué)氣相沉積法硅薄膜的制備及其性能

發(fā)布時(shí)間:2018-05-17 15:31

  本文選題:硅薄膜 + 防腐性; 參考:《大連工業(yè)大學(xué)學(xué)報(bào)》2017年02期


【摘要】:運(yùn)用化學(xué)氣相沉積技術(shù)在不銹鋼表面沉積了一層致密的硅薄膜,研究了沉積溫度及硅烷氣體壓力對(duì)硅薄膜性能的影響。對(duì)沉積的硅薄膜進(jìn)行了EDS能譜分析,通過SEM掃描電鏡對(duì)硅薄膜微觀形貌進(jìn)行表征,并對(duì)沉積硅薄膜的不銹鋼樣品進(jìn)行電化學(xué)分析,研究了硅薄膜對(duì)不銹鋼抗腐蝕性能的影響。結(jié)果表明,化學(xué)氣相沉積溫度為390℃、硅烷氣壓為10kPa時(shí)金屬表面形成的硅薄膜防腐性能最佳。
[Abstract]:A dense silicon film was deposited on the surface of stainless steel by chemical vapor deposition. The effects of deposition temperature and pressure of silane gas on the properties of silicon film were studied. The microstructure of silicon thin films was characterized by SEM scanning electron microscope (SEM). The effect of silicon films on corrosion resistance of stainless steel was studied by electrochemical analysis of stainless steel samples deposited by silicon thin films. The results show that when the chemical vapor deposition temperature is 390 鈩,

本文編號(hào):1901888

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