本文選題：帶隙基準(zhǔn) + 曲率補(bǔ)償�。� 參考：《西南交通大學(xué)》2017年碩士論文

【摘要】：帶隙基準(zhǔn)電壓源是電源管理芯片系統(tǒng)中是不可缺少的一部分,在模數(shù)轉(zhuǎn)換器、數(shù)模轉(zhuǎn)換器、片上系統(tǒng)和線性穩(wěn)壓器等中得到大量應(yīng)用。近些年來,隨著數(shù)字集成電路的迅速發(fā)展,在功能上可以代替一些模擬電路模塊,然而連續(xù)信號和模擬信號必須通過模擬集成電路來實(shí)現(xiàn)。由于溫度的變化、電源噪聲和負(fù)載波動(dòng)等外界因素的變化,不會(huì)影響基準(zhǔn)電壓的準(zhǔn)確性,可以為系統(tǒng)提供高性能高質(zhì)量的參考電壓,其精度對系統(tǒng)的性能有直接的影響,因此對基準(zhǔn)電壓源性能的優(yōu)化改進(jìn)顯得尤其重要,高精度、低功耗和低溫漂的基準(zhǔn)電壓成為當(dāng)前研究的主要方向�，F(xiàn)代電子設(shè)備芯片中通常包含有過溫保護(hù)模塊,為了限制芯片的溫度和功耗。由于電路長時(shí)間工作在重載情況下,會(huì)導(dǎo)致芯片的電流增加,直接導(dǎo)致環(huán)境溫度的變化。如果芯片的散熱性不佳,熱量會(huì)不斷積累,使芯片的溫度急劇上升,最終將芯片內(nèi)部的電路燒毀,為了保護(hù)芯片必須要限制芯片的溫度。本文首先介紹了帶隙基準(zhǔn)電壓的背景和研究意義,以及未來發(fā)展方向,然后在理論上對帶隙基準(zhǔn)電壓源的基本原理進(jìn)行了分析,并對常見的幾種基準(zhǔn)結(jié)構(gòu)進(jìn)行分析和對比,包括Kuijk、Widlar、Brokaw和Banba等帶隙基準(zhǔn),并且針對傳統(tǒng)的帶隙基準(zhǔn)電壓的溫度系數(shù)高等缺點(diǎn),設(shè)計(jì)了一種分段曲率補(bǔ)償?shù)慕Y(jié)構(gòu),分別在低溫和高溫階段對基準(zhǔn)電壓的溫度曲率進(jìn)行補(bǔ)償,降低基準(zhǔn)電壓的溫度系數(shù),達(dá)到設(shè)計(jì)的要求,同時(shí)也考慮到整體電路功耗,以較少的電流消耗為代價(jià)大幅提高了其精度,整體提升電路的性能,然后介紹了過溫保護(hù)電路的基本原理,針對傳統(tǒng)過溫保護(hù)電路穩(wěn)定性差的缺點(diǎn),本文采用溫度系數(shù)不同的電流進(jìn)行比較,產(chǎn)生過溫保護(hù)信號,提升過溫保護(hù)電路的穩(wěn)定性。本文基于0.18μmBCD工藝,采用Hspice軟件仿真,結(jié)果表明,電源電壓在2.5V至5V的之間變化可以產(chǎn)生1.237V的帶隙基準(zhǔn)電壓,線性調(diào)整率為0.0357%,電源電壓為 5V 時(shí),電源抑制比(Power Supply Rejection Ratio,PSRR)為 68.8dB,靜態(tài)電流功耗低至4.41μA,溫度在-40°C至150°C的范圍內(nèi),基準(zhǔn)電壓的溫度系數(shù)為2.84ppm。過溫保護(hù)電路在電源電壓為5V時(shí),溫度的上升和下降門限分別為150°C和135.8°C,并且電源電壓在2.5V至5V的范圍內(nèi)溫度的遲滯量變化為1.61°C。仿真結(jié)果表明,基準(zhǔn)電壓的溫度系數(shù)經(jīng)過曲率補(bǔ)償后大大降低,并且電路具有較低的工作電流,表現(xiàn)出優(yōu)良的性能,滿足了基準(zhǔn)源的低功耗和低溫漂的設(shè)計(jì)要求;過溫保護(hù)電路在電源電壓波動(dòng)時(shí),其溫度閾值和遲滯量具有較強(qiáng)的的穩(wěn)定性。
[Abstract]:Bandgap voltage reference is an indispensable part of power management chip system. It is widely used in analog-to-digital converter, digital-to-analog converter, on-chip system and linear voltage regulator. In recent years, with the rapid development of digital integrated circuit, some analog circuit modules can be replaced in function. However, continuous signal and analog signal must be realized by analog integrated circuit. Because of the change of temperature and external factors such as power noise and load fluctuation, the accuracy of reference voltage will not be affected, and the reference voltage of high performance and high quality can be provided for the system. The accuracy of the reference voltage has a direct effect on the performance of the system. Therefore, it is very important to optimize the performance of the reference voltage source. The reference voltage with high precision, low power consumption and low temperature drift becomes the main research direction. In order to limit the temperature and power consumption of modern electronic devices, it usually contains an over-temperature protection module. Because the circuit works in heavy load for a long time, it will lead to the increase of the current of the chip and the change of the ambient temperature. If the heat dissipation of the chip is not good, the heat will accumulate continuously, which will cause the temperature of the chip to rise sharply, and finally burn the circuit inside the chip. In order to protect the chip, the temperature of the chip must be limited. This paper first introduces the background and significance of bandgap reference voltage, and the future development direction, then theoretically analyzes the basic principle of band-gap voltage reference source, and analyzes and compares several common reference structures. This paper includes bandgap reference such as Kuijk Banba and Banba, and designs a piecewise curvature compensation structure to compensate the temperature curvature of the reference voltage at low temperature and high temperature, aiming at the high temperature coefficient of the traditional bandgap reference voltage, and then designs a piecewise curvature compensation structure, which compensates the temperature curvature of the reference voltage at low temperature and high temperature, respectively. Reducing the temperature coefficient of the reference voltage to meet the design requirements, but also taking into account the overall circuit power consumption, at the cost of less current consumption, greatly improve its accuracy, the overall performance of the circuit, Then the basic principle of over-temperature protection circuit is introduced. In view of the disadvantage of the traditional over-temperature protection circuit, the current with different temperature coefficient is compared to produce the over-temperature protection signal and enhance the stability of the over-temperature protection circuit. Based on 0.18 渭 mBCD process and Hspice software simulation, the results show that the band gap reference voltage of 1.237 V can be generated when the power supply voltage varies from 2.5 V to 5 V, the linear adjustment rate is 0.0357 V, and the power supply voltage is 5 V. The power rejection ratio (PSRR) is 68.8 dB, the static current power consumption is as low as 4.41 渭 A, the temperature is in the range of -40 擄C to 150 擄C, and the temperature coefficient of the reference voltage is 2.84 ppm. When the power supply voltage is 5 V, the threshold of temperature rise and fall are 150 擄C and 135.8 擄C, respectively, and the hysteresis of temperature in the range of 2.5 V to 5 V is 1.61 擄C. The simulation results show that the temperature coefficient of the reference voltage is greatly reduced after curvature compensation, and the circuit has low working current and excellent performance, which meets the design requirements of low power consumption and low temperature drift of the reference source. When the supply voltage fluctuates, the temperature threshold and hysteresis of over-temperature protection circuit have strong stability.
【學(xué)位授予單位】：西南交通大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN432

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