本文選題：表面等離子體 + 超分辨　； 參考：《電子科技大學(xué)》2017年博士論文

【摘要】：光刻技術(shù)是集成電路的一個關(guān)鍵技術(shù),其主要目的是將掩模板上的圖形復(fù)制到硅片上。整個芯片工藝所能達到的最小尺寸就是由光刻技術(shù)決定的。由于受光學(xué)衍射極限的約束,傳統(tǒng)光刻的分辨力只能達到半個波長水平。通常情況下,人們通過減小工作波長或者提高數(shù)值孔徑的方法提高光刻圖形的分辨力。但面臨著波長持續(xù)縮短和數(shù)值孔徑極限的成本和技術(shù)障礙。分辨力受限的本質(zhì)在于攜帶物體精細(xì)結(jié)構(gòu)信息的高頻倏逝波傳播距離短,不能傳輸至像面參與成像所致。近年來,近場光學(xué)的迅速發(fā)展,使得對倏逝波的操控和調(diào)節(jié)成為可能,以表面等離子體(surface plasmons,SPs)為代表的突破衍射極限的方法受到了廣泛關(guān)注。本論文主要是利用SPs調(diào)控光波信息的傳輸,開展基于SPs的超分辨光刻理論和實驗研究。主要內(nèi)容可分為三個部分:利用金屬/介質(zhì)多層膜超材料傳輸衍射受限的圖形信息實現(xiàn)一對一的超分辨光刻成像;利用超材料的濾波傳輸特性使得單一衍射級次的高頻倏逝波通過,并相互干涉產(chǎn)生深亞波長的光刻圖形;分析膜層表面粗糙度對納米尺度光刻圖形質(zhì)量的影響。具體研究內(nèi)容和結(jié)果為:1.基于SPs的超分辨成像光刻研究。一方面,實驗驗證了多層膜結(jié)構(gòu)可以有效傳輸倏逝波提高光刻分辨力的理論。利用平面型金屬/介質(zhì)復(fù)合納米薄膜設(shè)計出可以傳輸物體精細(xì)結(jié)構(gòu)信息的超材料,通過共濺射方法制備復(fù)合多層膜,最終實驗獲得了特征尺寸100 nm的亞波長掩模的光刻圖像。另一方面,針對一對一成像形式的超分辨光刻中掩模圖形特征尺寸難以持續(xù)減小的問題,提出了一種超分辨縮小成像光刻結(jié)構(gòu)。主要是以金屬/介質(zhì)多層膜超材料為基礎(chǔ),設(shè)計出曲面-平面混合膜層結(jié)構(gòu)的光刻結(jié)構(gòu),模擬結(jié)果表明任意間隔的縫隙的特征尺寸從100 nm可被縮小至28 nm(3.5倍縮小)。這種方法利用大特征尺寸的掩模獲得小特征尺寸的圖形,避免了小特征尺寸的掩模加工難題。2.基于SPs的超分辨干涉光刻研究。限于表面?zhèn)鬏數(shù)腟Ps可干涉形成周期圖形,但存在干涉區(qū)域面積小、光場不均勻、掩模加工復(fù)雜的問題,本文提出并實驗驗證了一種基于新型多層膜超材料的體等離子體(bulk plasmons,BPs)干涉光刻結(jié)構(gòu)。主要是利用金屬/介質(zhì)多層膜構(gòu)造新型的等離子體超材料,它具有較窄的波矢量傳輸通帶窗口,可以選擇傳輸特定級次的衍射波,并在光刻膠層形成大面積的均勻深亞波長干涉光刻圖形。作為示例,我們利用制備的超平埋入式掩模和多層膜超材料選擇傳輸雙束、四束BPs波,在光刻膠層干涉獲得均勻的半周期45 nm(~λ/8)的一維、二維光刻圖形。而且,進一步計算表明,通過調(diào)節(jié)多層膜的幾何參數(shù)還可以獲得更小分辨力至22.5 nm(~λ/16)的周期圖形,以及六束BPs干涉的蜂巢狀圖形。另外,借鑒傳統(tǒng)多波束干涉原理,我們系統(tǒng)研究了利用多束BPs干涉獲得超衍射的多樣化圖形方法,推導(dǎo)出各干涉周期圖形的周期計算公式,完善了近場表面波干涉理論。這部分工作在納米光刻方面,提供了一種具有經(jīng)濟、可并行、大面積、圖形均勻等優(yōu)勢的加工方法。3.納米膜層粗糙度檢測及其對光刻圖形質(zhì)量的影響分析。一方面,針對常用的銀/膠/銀三層膜構(gòu)成的SPs共振腔成像光刻結(jié)構(gòu),結(jié)合模板剝離技術(shù),檢測了金屬透射膜層的上、下表面粗糙度。并從薄膜的生長模式方面分析了不同襯底材料對生長薄膜的表面粗糙度影響。另一方面,針對以單層膜超透鏡和多層膜超材料為基礎(chǔ)的兩種SPs超分辨光刻結(jié)構(gòu),比較分析了膜層粗糙度對光刻圖形質(zhì)量的影響,包括光刻圖形的邊緣粗糙度、光強度等關(guān)鍵參量。并從光學(xué)傳遞函數(shù)和SPs傳輸模式等方面解釋了膜層和掩模缺陷在兩種光刻結(jié)構(gòu)中造成不同效果的原因,闡述了具有空間頻率選擇特性的光刻結(jié)構(gòu)對膜層缺陷容忍度較高的特點,并利用SPs波導(dǎo)光刻結(jié)構(gòu)驗證了分析結(jié)果。這部分研究對納米薄膜的性能分析,及光刻結(jié)構(gòu)設(shè)計具有較高的參考意義。
[Abstract]:Photolithography is a key technology in integrated circuits. Its main purpose is to copy the graphics on the mask to silicon. The minimum size of the whole chip process is determined by photolithography. Due to the constraints of the optical diffraction limit, the resolution of the traditional lithography can only reach a half wavelength level. By reducing the working wavelength or increasing the numerical aperture, the resolution of the photolithography is improved. However, it is faced with the cost and technical barrier to the continuous shortening of the wavelength and the limit of the numerical aperture. The nature of the resolution limitation is that the high frequency evanescent wave propagation distance that carries the fine structure information of the object is short and can not be transferred to the image surface to participate in the imaging. In recent years, the rapid development of near field optics makes it possible to manipulate and regulate evanescent waves. The method of breaking the diffraction limit represented by surface plasma (surface plasmons, SPs) has attracted wide attention. This paper mainly uses SPs to regulate the transmission of light wave information, and carries out the theory and experiment of ultra resolution lithography based on SPs. The main content can be divided into three parts: one to one super-resolution lithography is realized by using metal / dielectric multilayer supermaterial to transmit diffraction limited graphic information. The high frequency evanescent wave of single diffraction order is passed through the filtering transmission characteristics of supermaterial, and the photolithography of deep sub wavelength is involved in each other, and the analysis of the film is analyzed. The effect of surface roughness on the quality of nanoscale lithography. The specific research content and results are 1. based on SPs based superresolution imaging photolithography. On one hand, the experiment verifies the theory that multilayer membrane structures can effectively transmit evanescent waves to improve the photolithography resolution. The supermaterial with fine structure information is prepared by CO sputtering method. Finally, the photolithography images of the sub wavelength mask with characteristic size of 100 nm are obtained. On the other hand, a super resolution narrowing imaging is proposed for the problem that the mask pattern feature size is difficult to decrease continuously in the one to one imaging super resolution lithography. Photolithography structure, mainly based on metal / dielectric multilayer supermaterials, is designed to design a photolithography structure of a surface - plane - plane mixed membrane structure. The simulation results show that the feature size of the gap at any interval can be reduced from 100 nm to 28 nm (3.5 times smaller). .2. based on SPs based superresolution interference photolithography for small feature size, the SPs can interfere with the formation of periodic patterns, but the area of the interference region is small, the light field is not uniform, and the mask processing is complex. In this paper, a new type of bulk plasma (bulk) based on a new type of multilayer supermaterial (bulk) is presented and verified experimentally. Plasmons, BPs) interference lithography structure. It is mainly to use metal / dielectric multilayer to construct a new type of plasma supermaterial. It has a narrow wave vector transmission band window. It can choose the diffraction wave of a particular order, and form a large area of uniform deep subwavelength interference lithography in the photolithography. As an example, we use the preparation The ultra flat embedded masks and multilayer film supermaterials choose to transfer double beams and four beam BPs waves to obtain a uniform half period of 45 nm (~ /8) in the photolithography. Moreover, further calculations show that the periodic patterns of smaller resolution to 22.5 nm (~ [/16) can be obtained by adjusting the geometric parameters of the multilayer film, and Six beehive shapes of BPs interference. In addition, drawing on the traditional multi beam interference principle, we systematically studied the multi beam BPs interference to obtain the diversification of the ultra diffraction pattern, derived the periodic calculation formula of each interference periodic figure, and improved the near field surface wave interference theory. This part of the work provides a kind of nano lithography. The.3. nano film roughness detection and its influence on the photolithography quality are analyzed with the advantages of economic, parallel, large area, and uniform graphics. On the one hand, the SPs resonant cavity imaging lithography structure composed of the three layers of silver / glue / silver film is used to detect the upper and lower surface roughness of the metal transmission film with the template stripping technique. The influence of different substrate materials on the surface roughness of the growth film is analyzed from the growth mode of the film. On the other hand, the influence of the coating roughness on the photolithography quality is compared and analyzed for the two SPs super-resolution lithography structures based on the single layer superlensing and the multilayer supermaterial, including the edge of the lithography pattern. The factors such as roughness, light intensity and other key parameters are explained in terms of the optical transfer function and the SPs transmission mode. The reasons for the different effects of the film and mask defects in the two lithography structures are explained. The characteristics of the photolithography structure with the characteristics of the spatial frequency selection are described, and the structure of the SPs waveguide photolithography is verified. The analysis results are of great reference value to the performance analysis of nano thin films and the design of lithography structure.

【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2017
【分類號】：TN305.7

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本文編號：1865508