本文選題：數(shù)值分析 + 熔融硅　； 參考：《熱加工工藝》2017年09期

【摘要】：使用COMSOL Multiphysics模擬計算軟件,建立了水平管道凝固模型,采用自適應(yīng)網(wǎng)格劃分法劃分網(wǎng)格,在溫度場和流場耦合作用下,對熔融硅在水平管道中的凝固過程進行數(shù)值模擬。模擬結(jié)果顯示:在熔融硅的凝固過程中,在靠近坩堝口壁面附近出現(xiàn)了流線形狀的波紋,并形成了漩渦流。在凝固區(qū)和結(jié)晶區(qū)熔融硅釋放了大量的潛熱,其外邊界熱流密度較大。該研究為獲得超薄硅片成形所需的穩(wěn)定生長環(huán)境和制備更為平整的薄片提供理論依據(jù)。
[Abstract]:In this paper, the solidification model of horizontal pipeline is established by using COMSOL Multiphysics software. The numerical simulation of the solidification process of molten silicon in horizontal pipeline is carried out under the coupling of temperature field and flow field. The simulation results show that in the solidification process of molten silicon, the ripples with streamline shape appear near the wall of the crucible mouth, and a swirl flow is formed. A large amount of latent heat is released from molten silicon in solidification and crystallization regions, and its external boundary heat flux is high. This study provides a theoretical basis for obtaining the stable growth environment and preparing more flat wafers for ultra-thin silicon wafer forming.
【作者單位】： 江蘇大學(xué)微納米科學(xué)技術(shù)研究中心;常州大學(xué)江蘇省光伏科學(xué)與工程協(xié)同創(chuàng)新中心;
【基金】：國家自然科學(xué)基金重點項目(51335002)
【分類號】：TN304.12
，

本文編號：1853368