發(fā)布時間：2018-05-04 09:15

  本文選題：MSM器件 + 飛秒激光��； 參考：《安徽大學》2017年碩士論文

【摘要】：GaAs是Ⅲ-Ⅴ族化合物半導體材料,具有禁帶寬度大、擊穿電壓高、抗輻照能力強、化學性能穩(wěn)定優(yōu)點。由GaAs基或GaAs直接制作的器件,在器件反應靈敏度、線性響應、綜合性能方面都有很大的優(yōu)勢。而金屬-半導體-金屬(MSM)結(jié)構(gòu)的器件因其平面型,工藝簡單,便于集成等優(yōu)點倍受青睞。因此,近年來,用GaAs材料制備的MSM光電探測器是人們研究的熱門課題之一。本文研究了GaAs基MSM器件的光電特性。首先對MSM電探測器的基本結(jié)構(gòu)和工作原理進行了討論,并提出了改善MSM光電探測器性能的方法;然后,使用FDTD仿真研究了 Al光柵MSM探測器各項結(jié)構(gòu)參數(shù)對器件性能的影響;結(jié)果表明,Al光柵MSM探測器的性能可以與Au光柵探測器性能媲美,并且在波長為600 nm-750nm的范圍內(nèi),Al光柵探測器的性能比Au光柵探測器的性能更優(yōu),另外,Al金屬價格低廉,可以大大降低生產(chǎn)成本。良好的微納結(jié)構(gòu)是很多前沿科學產(chǎn)生重大突破的前提,所以探索微納結(jié)構(gòu)的制作方法目前已經(jīng)成為世界各國的研究熱點。飛秒激光雙光子聚合(Two Photon Polymerization,TPP)作為一種強大的、有潛力的三維微納加工方法,在與物質(zhì)相互作用過程中具有作用時間短、熱影響區(qū)域小、加工精度高等獨特的優(yōu)點,并可以加工多種工程材料(如聚合物、陶瓷、金屬、雜化材料等)的任意復雜的三維結(jié)構(gòu)。因此被廣泛應用在微光學器件、電子、通信、生物醫(yī)學、微流體器件、微機電系統(tǒng)、超材料等領(lǐng)域。利用飛秒激光直寫技術(shù),人們已經(jīng)成功的制備了各種器件構(gòu)型的高質(zhì)量二維和三維微納光子器件。本文便是使用飛秒激光直寫技術(shù)加工出微柱結(jié)構(gòu),并將毛細力自組裝作為輔助方法,制備各種復雜結(jié)構(gòu)。分析了微柱自組裝的條件:FCFE;均勻分布的微柱陣列受隨機缺陷和溶液蒸發(fā)過程中的不穩(wěn)定因素的影響,自組裝圖案較為隨機,為了實現(xiàn)對自組裝的控制,提出了在微柱間增加額外間距的方法。實驗結(jié)果表明,額外間距的增加可以實現(xiàn)排列均勻、有序、穩(wěn)定的自組裝結(jié)構(gòu),并且,在自組裝范圍達到100%之前,額外間距的增加會使自組裝范圍迅速增大。通過設(shè)置額外間距,制備了各種圖案結(jié)構(gòu)。研究了制備各向異性結(jié)構(gòu)的方法:前端導向蒸發(fā)方法——借助重力作用,元胞內(nèi)微柱受到的毛細力不同,待溶液完全蒸發(fā)后,便可實現(xiàn)各向異性自組裝。通過分析毛細力和彈性回復力的公式,發(fā)現(xiàn)可以在同一元胞內(nèi)加工不同高度或不同直徑的微柱,達到微柱受力不同的目標。使用飛秒激光直寫制備雙層結(jié)構(gòu),討論了底層微柱的直徑和加工時的能量對結(jié)構(gòu)的影響,分析了上層微柱在不同高度和激光能量時的自組裝情況。毛細力自組裝結(jié)構(gòu)兩個應用:一是粒子捕獲和釋放,另一個為結(jié)晶,在元胞周期較小且溶液濃度較大的情況下,可以生成微納米線。飛秒激光與毛細力自組裝相結(jié)合為3D微納結(jié)構(gòu)的制備開辟了新天地,在化學,生物醫(yī)藥,微流體等方面具有非常好的應用前景。
[Abstract]:GaAs is a three - V compound semiconductor material, with large band gap, high breakdown voltage, strong radiation resistance and stable chemical properties. The devices made directly by GaAs or GaAs have great advantages in the response sensitivity, linear response and comprehensive performance of the devices. The devices of metal semiconductor metal (MSM) structure are due to their planes In recent years, the MSM photodetectors prepared with GaAs materials are one of the hot topics in recent years. This paper studies the photoelectric characteristics of GaAs based MSM devices. First, the basic structure and working principle of MSM electric detectors are discussed, and the improvement of MSM photodetectors is proposed. Then, the influence of the structure parameters of the Al grating MSM detector on the performance of the device is studied by FDTD simulation. The results show that the performance of the Al grating MSM detector is comparable to that of the Au grating detector, and the performance of the Al grating detector is better than the Au grating detector in the range of 600 nm-750nm. In addition, Al metal is cheap and can greatly reduce the cost of production. Good micro nano structure is the prerequisite for many frontier science to make major breakthroughs. Therefore, the method of exploring the fabrication of micro nano structure has become a hot topic in the world. As a powerful, Two Photon Polymerization (TPP), the femtosecond laser dual photon polymerization is a powerful one. The potential three-dimensional micro nano processing method has the advantages of short action time, small heat affected area and high processing precision in the process of interaction with material, and can process any complex three-dimensional structure of engineering materials such as polymers, ceramics, metals, hybrid materials and so on. Therefore, it is widely used in microoptics devices and electrons. Communication, biomedicine, microfluidic devices, microelectromechanical systems, supermaterials and other fields. By using femtosecond laser direct writing technology, high quality two-dimensional and three-dimensional micro nano photonic devices have been successfully prepared for various device configurations. This paper uses femtosecond laser direct writing technology to process micro column structure and use self assembly of capillary force as auxiliary side. A variety of complex structures are prepared. The conditions for self-assembly of Microcolumns are analyzed: FCFE. The uniform distribution of microcolumn arrays is affected by the random defects and the instability factors in the evaporation process. The self-assembly pattern is more random. In order to realize the control of the self-assembly, the method of adding extra space between the Microcolumns is proposed. The experimental results show that the extra space is extra. The increase in spacing can achieve a uniform, orderly and stable self-assembly structure, and the increase of the extra space will increase the range of self assembly quickly before the range of self assembly reaches 100%. By setting extra spacing, various pattern structures are prepared. The method of preparing anisotropic structure is studied: the front end guide evaporation method is borrowed. In the action of gravity, the capillary force of the microcolumn in the cell is different. After the solution is completely evaporated, the anisotropic self assembly can be realized. By analyzing the formula of the capillary force and elastic recovery force, it is found that the micro columns with different height or different diameter can be processed in the same unit cell to achieve the target with different force in the micro column. The femtosecond laser direct writing system is used. The double layer structure is prepared. The diameter of the microcolumn and the influence of the energy on the structure are discussed. The self-assembly of the upper micro column at different height and laser energy is analyzed. The self assembly structure of the capillary force is two applications, one is the particle capture and release, the other is crystallized, and the cell cycle is small and the concentration of the solution is large. The micro nanowires can be generated. The combination of femtosecond laser and capillary force self assembly opens a new field for the preparation of 3D micro nanostructures. It has a very good application prospect in chemistry, biomedicine, micro fluid and so on.

【學位授予單位】：安徽大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN36

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