本文選題：憶阻器 + 耦合效應(yīng)　； 參考：《西南大學(xué)》2017年碩士論文

【摘要】：隨著電子技術(shù)和材料工藝的發(fā)展,復(fù)雜信息處理的方式越來越高效簡潔。作為納米級(jí)材料的最新成果,憶阻器將磁通量和電荷聯(lián)系起來,并且?guī)в杏洃浱匦?加上其天然的納米級(jí)尺寸,受到了學(xué)術(shù)界和工業(yè)界的極大關(guān)注和研究。同時(shí),憶阻器能夠模擬人類大腦中突觸的記憶功能,這有望徹底改變計(jì)算機(jī)的工作方式和信息處理方式。本文分析了憶阻器的研究現(xiàn)狀,緊接著總結(jié)了憶阻器相關(guān)數(shù)學(xué)模型的理論和仿真。然后,對(duì)憶阻器間的耦合行為進(jìn)行了詳細(xì)分析,探討了初始阻值對(duì)憶阻器工作范圍的影響。最后,對(duì)憶阻橋突觸電路進(jìn)行了相關(guān)分析和仿真實(shí)驗(yàn),并且針對(duì)其不足進(jìn)行了改進(jìn)。首先,本文分析了惠普憶阻器、自旋憶阻器和磁控耦合憶阻器的數(shù)學(xué)模型,并且進(jìn)行了理論分析和仿真實(shí)驗(yàn)。其次,在磁控憶阻器的基礎(chǔ)上構(gòu)建了磁控耦合憶阻器的數(shù)學(xué)模型,總結(jié)了不同連接方向下的憶阻器串并聯(lián)的耦合行為,而且利用設(shè)計(jì)的圖形用戶界面直觀的展示了耦合憶阻器的關(guān)系曲線。然后,討論了不同初始憶阻值下,憶阻器正常工作范圍的變化。緊接著利用Pspice仿真電路,從電路的方向出發(fā),再次展示了憶阻器之間的耦合行為。最后,對(duì)憶阻橋突觸電路權(quán)重的更新規(guī)則進(jìn)行了詳細(xì)說明,并且利用電路仿真軟件對(duì)其進(jìn)行了仿真實(shí)驗(yàn)。本文對(duì)憶阻橋突觸電路進(jìn)行了改進(jìn),構(gòu)建了新型的憶阻橋突觸電路,節(jié)省了電流信號(hào)和電壓信號(hào)之間相互轉(zhuǎn)換的過程。
[Abstract]:With the development of electronic technology and material technology, the mode of complex information processing is becoming more and more efficient and succinct. As the latest achievement of nanomaterials, the memristor connects magnetic flux and charge with memory characteristics, coupled with its natural nanoscale size, and has received great attention and research from the academic and industrial circles. The device can simulate the memory function of the synapse in the human brain, which is expected to completely change the working mode of the computer and the way of information processing. This paper analyzes the current research status of the memristor, and then summarizes the theory and Simulation of the mathematical model of the memristor. Then, the coupling behavior between the memristors is analyzed in detail, and the initial method is discussed. The influence of the resistance on the working range of the memristor. Finally, the correlation analysis and simulation experiment of the memristor bridge circuit are carried out, and the defects are improved. First, the mathematical model of the HP memristor, the spin memristor and the magnetic control coupled memristor is analyzed, and the theoretical analysis and simulation experiments are carried out. Secondly, in the magnetic control The mathematical model of the magnetron coupled memristor is built on the basis of the memristor, and the coupling behavior of the series and parallel of the memristor under different connection directions is summarized, and the relationship curve of the coupled memristor is displayed intuitively by the designed graphical user interface. Then, the change of the normal working range of the memristor under different initial recristors is discussed. Then, using the Pspice simulation circuit, the coupling behavior between the memristors is shown again from the direction of the circuit. Finally, the updating rules of the synaptic circuit weight of the memristor bridge are explained in detail, and the simulation experiment is carried out with the circuit simulation software. The memristor synaptic circuit saves the conversion process between current signals and voltage signals.

【學(xué)位授予單位】：西南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN60

【參考文獻(xiàn)】

相關(guān)期刊論文 前8條

1 武花干;陳勝W，

本文編號(hào)：1834937