本文選題：功率放大器 + GaAs��； 參考：《北京工業(yè)大學(xué)》2015年碩士論文

【摘要】：本文面向TD-LTE第四代移動(dòng)通信業(yè)務(wù),基于GaAs單片集成電路(MMIC)項(xiàng)目,設(shè)計(jì)了一款應(yīng)用于手機(jī)等用戶(hù)設(shè)備(UE)的功率放大器(PA)芯片。功率放大器使用Ga As HBT作為核心功率器件,通過(guò)兩級(jí)放大實(shí)現(xiàn)高線(xiàn)性的設(shè)計(jì)要求。本文系統(tǒng)介紹了射頻器件襯底材料體系,GaAs HBT器件模型理論、建模方法,工藝線(xiàn)工藝設(shè)計(jì)套件(PDK),并以WIN HBT工藝參數(shù)使用ADS制作了一個(gè)KIT的樣本。通過(guò)對(duì)PA的線(xiàn)性化技術(shù)的分析,最終設(shè)計(jì)了適用于芯片級(jí)PA的自適應(yīng)偏置電路,在進(jìn)一步穩(wěn)定了PA的輸入偏置電流的同時(shí),抑制了HBT因增益壓縮、溫漂等現(xiàn)象引起的失真,提高了PA的線(xiàn)性性能;并在設(shè)計(jì)中將PA第一級(jí)放大器設(shè)計(jì)為預(yù)失真模塊,第二級(jí)放大器作為主放大模塊,最終將PA的ACPR改善了17dB。在設(shè)計(jì)過(guò)程中,對(duì)每一個(gè)HBT使用了RC并聯(lián)穩(wěn)定網(wǎng)絡(luò),并分析了其穩(wěn)定性能;使用估算和仿真結(jié)合的方法選取了適當(dāng)數(shù)量的HBT作為兩級(jí)放大的功率管芯;第二級(jí)放大器使用了Load-pull技術(shù)實(shí)現(xiàn)了最大功率匹配以提高PA的輸出功率,而第一級(jí)作為驅(qū)動(dòng)級(jí)采用了共軛匹配的方法產(chǎn)生最大增益。為產(chǎn)生更低的匹配損耗,重新仿真設(shè)計(jì)了匹配用的無(wú)源電感。最后使用ADS Momentum 2.5D電磁仿真工具對(duì)版圖進(jìn)行電磁仿真,并采用聯(lián)合仿真的方法確定版圖后的PA性能�？紤]了工藝誤差,最后設(shè)計(jì)得到的PA為通信Band 41頻段,中心頻率f0為2.6GHz,增益大于等于31d B,1d B功率壓縮點(diǎn)功率為30d Bm,鄰信道功率比ACPR(5MHz)、功率附加效率PAE在輸出功率29dBm時(shí)分別為-41dBc和46%。
[Abstract]:For the fourth generation mobile communication service of TD-LTE, based on the GaAs monolithic integrated circuit (GaAs) project, this paper designs a power amplifier chip for mobile phone and so on. GaAs HBT is used as the core power device in power amplifier. This paper systematically introduces the model theory, modeling method and process line process design kit of HBT devices based on the substrate material system of RF devices. A sample of KIT is made by using the WIN HBT process parameters using ADS. By analyzing the linearization technology of PA, an adaptive bias circuit suitable for chip PA is designed, which can further stabilize the input bias current of PA and restrain the distortion caused by gain compression and temperature drift in HBT. The linear performance of PA is improved, and the PA first stage amplifier is designed as a predistortion module and the second stage amplifier is used as the main amplifier module. Finally, the ACPR of PA is improved by 17 dB. In the design process, the RC parallel stable network is used for each HBT, and its stability performance is analyzed, and an appropriate number of HBT is selected as the two-stage amplifier power core using the method of estimation and simulation. The second stage amplifier uses Load-pull technology to realize the maximum power matching to improve the output power of PA, while the first stage uses conjugate matching as the driving stage to generate the maximum gain. In order to reduce the matching loss, the passive inductor for matching is redesigned. Finally, the ADS Momentum 2.5D electromagnetic simulation tool is used to simulate the layout, and the joint simulation method is used to determine the PA performance after the layout. Considering the process error, the PA is a communication Band 41 band, the center frequency f _ 0 is 2.6 GHz, the gain is more than or equal to 31dB ~ (-1) dB power compression point power is 30dBm, the adjacent channel power ratio is ACPR ~ (5) MHz ~ (z), and the power additional efficiency PAE is -41dBc and 46dB when the output power 29dBm is obtained, respectively.
【學(xué)位授予單位】：北京工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN722.75
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本文編號(hào)：1824241