本文選題：半導(dǎo)體激光器 + 雙波長(zhǎng)　； 參考：《長(zhǎng)春理工大學(xué)》2017年碩士論文

【摘要】：雙波長(zhǎng)半導(dǎo)體激光器具有效率高、結(jié)構(gòu)緊湊、使用方便等優(yōu)點(diǎn),在很多領(lǐng)域有重要的應(yīng)用。1030nm、1064nm等波段雙波長(zhǎng)半導(dǎo)體激光器在高亮度的激光彩色顯示、激光彩色打印等設(shè)備及娛樂(lè)業(yè)等領(lǐng)域中具有廣闊的應(yīng)用前景。目前國(guó)內(nèi)關(guān)于高功率雙波長(zhǎng)半導(dǎo)體激光器的研究相對(duì)于發(fā)達(dá)國(guó)家有著較大的差距,因此,研究出單片集成高功率、近衍射極限雙波長(zhǎng)半導(dǎo)體激光器具有重要的意義。在本論文的研究中,我們?cè)O(shè)計(jì)一種1064nm,1030nm雙DBR半導(dǎo)體激光器結(jié)構(gòu),并在外延片上進(jìn)行試驗(yàn)制做。本論文首先對(duì)半導(dǎo)體激光器的發(fā)展歷程及原理進(jìn)行了介紹。然后采用MOCVD系統(tǒng)對(duì)1064nm,1030nm雙DBR半導(dǎo)體激光器外延結(jié)構(gòu)進(jìn)行生長(zhǎng),通過(guò)濕法腐蝕工藝制備出了脊形波導(dǎo),采用325nm全息曝光系統(tǒng)對(duì)脊形波導(dǎo)進(jìn)行全息光刻,完成DBR的制備,并利用ICP干法刻蝕,制備出光柵的周期結(jié)構(gòu),通過(guò)光刻、濕法腐蝕等工藝制備出了錐形放大器,初步完成了雙DBR錐形半導(dǎo)體激光器的工藝制作。最后對(duì)研制的單DBR和錐形半導(dǎo)體激光器的輸出特性進(jìn)行了測(cè)試分析。
[Abstract]:Dual-wavelength semiconductor lasers have many advantages, such as high efficiency, compact structure, easy to use and so on. They have important applications in many fields. 1030nm / 1064nm dual-wavelength semiconductor lasers have high brightness color display. Laser color printing and other equipment and entertainment industry and other fields have a broad application prospects. At present, there is a big gap in the research of high power dual-wavelength semiconductor lasers compared with the developed countries. Therefore, it is of great significance to study single-chip integrated dual-wavelength semiconductor lasers with high power and near diffraction limit. In this thesis, we designed a 1064nm 1030nm double DBR semiconductor laser and fabricated it on the epitaxial wafer. Firstly, the development and principle of semiconductor laser are introduced in this paper. Then the epitaxial structure of 1064nm 1030nm double DBR semiconductor laser was grown by MOCVD system. The ridged waveguide was fabricated by wet etching process. The ridged waveguide was holographed by 325nm holographic exposure system to complete the preparation of DBR. The periodic structure of the grating was fabricated by ICP dry etching. The tapered amplifier was fabricated by lithography and wet etching. The fabrication of double DBR conical semiconductor laser was preliminarily completed. Finally, the output characteristics of single DBR and conical semiconductor lasers are tested and analyzed.
【學(xué)位授予單位】：長(zhǎng)春理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN248.4

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