本文選題：IGBT多階段驅(qū)動(dòng)方法 + 反饋控制�。� 參考：《浙江大學(xué)》2017年碩士論文

【摘要】：絕緣柵雙極型晶體管(IGBT)在各種中大功率電力電子裝置中得到廣泛應(yīng)用,但是IGBT在開(kāi)關(guān)瞬態(tài)產(chǎn)生的電壓過(guò)沖和電流過(guò)沖,不但會(huì)增加電路電磁干擾,甚至?xí)䲟p壞器件。因此,通過(guò)IGBT驅(qū)動(dòng)電路時(shí)就需要考慮減小IGBT在開(kāi)關(guān)瞬態(tài)中的電壓過(guò)沖和電流過(guò)沖的方法受到廣泛的關(guān)注。本論文以IGBT有源驅(qū)動(dòng)為研究對(duì)象,對(duì)多階段驅(qū)動(dòng)方式對(duì)IGBT開(kāi)關(guān)特性的影響進(jìn)行研究。首先,論文對(duì)IGBT的開(kāi)關(guān)特性及現(xiàn)有的IGBT多階段驅(qū)動(dòng)方法進(jìn)行了分析,傳統(tǒng)多階段驅(qū)動(dòng)方法通過(guò)在特定驅(qū)動(dòng)階段改變驅(qū)動(dòng)電壓或者驅(qū)動(dòng)電阻的方式以抑制IGBT在開(kāi)關(guān)瞬態(tài)中的電壓過(guò)沖和電流過(guò)沖,但是這一方法也存在一些缺點(diǎn)如驅(qū)動(dòng)電路復(fù)雜、控制信號(hào)易受干擾,模擬電平隔離困難,損耗增加明顯等。為了解決現(xiàn)有IGBT多階段驅(qū)動(dòng)方法的一些缺點(diǎn),優(yōu)化其性能,本文提出了一種新型IGBT多階段驅(qū)動(dòng)。該方法基于電壓變化率和電流變化率的信號(hào)反饋,通過(guò)電壓和電阻復(fù)合改變的方法,將IGBT開(kāi)關(guān)過(guò)程分階段控制,在達(dá)到控制效果(電壓電流過(guò)沖)的前提下減小開(kāi)關(guān)時(shí)間和開(kāi)關(guān)損耗,通過(guò)數(shù)字控制電路完成反饋控制,簡(jiǎn)化了驅(qū)動(dòng)電路。最后,論文搭建了仿真模型雙脈沖測(cè)試平臺(tái)進(jìn)行驗(yàn)證,給出了實(shí)驗(yàn)結(jié)果,仿真和實(shí)驗(yàn)測(cè)試驗(yàn)證論文所研究的新型多階段驅(qū)動(dòng)方法的優(yōu)點(diǎn)。
[Abstract]:Insulated gate bipolar transistor (IGBT) is widely used in various medium and high power power electronic devices, but the voltage overshoot and current overshoot produced by IGBT in the switching transient will not only increase the electromagnetic interference of the circuit, but also damage the device.Therefore, the methods to reduce the voltage overshoot and current overshoot of IGBT in the switching transient need to be considered in the IGBT drive circuit.In this paper, IGBT active drive is taken as the research object, and the effect of multi-stage drive mode on IGBT switch characteristics is studied.Firstly, the switching characteristics of IGBT and the existing IGBT multi-stage drive methods are analyzed.The traditional multi-stage drive method can suppress the voltage overshoot and current overshoot of IGBT in the switching transient by changing the driving voltage or resistance at a specific driving stage. However, this method also has some disadvantages, such as the complexity of the drive circuit.The control signal is easy to interfere, the analog level isolation is difficult, the loss increases obviously.In order to solve the shortcomings of the existing IGBT multi-stage drive methods and optimize its performance, a new type of IGBT multi-stage driver is proposed in this paper.Based on the signal feedback of voltage change rate and current change rate, the IGBT switch process is controlled by the method of voltage and resistance compound change.On the premise of the control effect (voltage and current overshoot), the switching time and switching loss are reduced, and the drive circuit is simplified by the digital control circuit to complete the feedback control.Finally, the paper builds a simulation model of double-pulse test platform for verification, and gives the experimental results, simulation and experimental tests to verify the advantages of the new multi-stage driving method studied in this paper.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN322.8

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