本文選題：Cu_2O薄膜 + 直流反應(yīng)磁控濺射��； 參考：《深圳大學(xué)》2017年碩士論文

【摘要】：Cu_2O是一種應(yīng)用前景廣泛的直接帶隙半導(dǎo)體材料。它的光學(xué)帶隙約為2.1eV,具有儲量廣、無毒性、長期穩(wěn)定等特點,適合應(yīng)用于太陽能電池、光催化等領(lǐng)域。本征Cu_2O為p型導(dǎo)電的半導(dǎo)體,如何制備n型Cu_2O、改變光學(xué)帶寬、實現(xiàn)pn同質(zhì)結(jié)以及提高光電轉(zhuǎn)換效率成為人們研究Cu_2O的重點。本文的內(nèi)容是制備并摻雜Cu_2O薄膜,研究薄膜的光電性能。本文通過反應(yīng)直流磁控濺射方法制備純相Cu_2O薄膜并摻入Zn和In兩種元素,以及利用熱擴散法對Cu_2O薄膜進行F摻雜。研究未摻雜的Cu_2O、Zn和In共摻雜的Cu_2O,以及F摻雜的Cu_2O的光電特性。具體的工作有如下幾方面:首先,本文探究了制備純相Cu_2O的條件。通過調(diào)控襯底溫度、濺射壓強、濺射功率及O2與Ar流量比制備純相Cu_2O薄膜,實驗發(fā)現(xiàn)在襯底溫度為400℃、濺射壓強為2.0Pa、O2與Ar流量比為1:12、Cu靶濺射電壓為350V,電流為40mA時可以生成結(jié)晶較好,生長顆粒明顯的純相Cu_2O的薄膜。其次,在能生成單相Cu_2O的條件基礎(chǔ)上,本文制備了In、Zn共摻雜的Cu_2O薄膜并研究了其光電性能。固定Cu靶濺射電壓,適當(dāng)增加銦鋅合金靶濺射電壓,可得到摻雜的純相Cu_2O薄膜。但合金靶電壓不能高于320V,否則會產(chǎn)生其他雜質(zhì)相。制備的In和Zn共摻雜Cu_2O薄膜在500nm以上具有較高的透射率,樣品帶隙約為2.5eV,與未摻雜Cu_2O的光學(xué)帶隙相比,In和Zn共摻雜后的薄膜光學(xué)帶隙有較大的改變。當(dāng)合金靶電壓為310V時制備出的In和Zn摻雜的純相Cu_2O薄膜樣品的導(dǎo)電類型由p型轉(zhuǎn)變?yōu)閚型。對樣品進行XPS測試表明樣品含有銅、氧、銦及鋅,且銅以Cu1+存在,銦以In3+存在,鋅以Zn2+存在,這表明摻入的銦和鋅替代了銅的位置,兩種元素成功摻入Cu_2O薄膜中。最后,本文利用熱擴散法制備了F摻雜Cu_2O薄膜并研究了其光電特性。發(fā)現(xiàn)當(dāng)擴散溫度介于850℃~1000℃、擴散時間為30min、CuF2質(zhì)量為100mg、Ar流量為100sccm以及擴散壓強為400Pa時,可以制備出結(jié)晶良好的F摻雜Cu_2O薄膜。經(jīng)EDS測試,所有樣品中都含有F元素,表明F原子成功摻雜進入Cu_2O薄膜。通過霍爾效應(yīng)測試發(fā)現(xiàn)所有熱擴散摻雜F的樣品都為p型導(dǎo)電。在擴散溫度為850℃、擴散時間30min、擴散劑質(zhì)量為100mg、擴散Ar流量為100sccm、擴散壓強為400Pa的條件下制備出了最小電阻率為50×cm薄膜樣品,這比較適合太陽能電池的應(yīng)用。
[Abstract]:Cu_2O is a kind of direct band gap semiconductor material with wide application prospect.Its optical band gap is about 2.1 EV, which has the characteristics of wide storage, non-toxicity, long-term stability, etc. It is suitable for application in solar cells, photocatalysis and other fields.As the intrinsic Cu_2O is a p-type conductive semiconductor, how to prepare n-type CuS _ 2O, change the optical bandwidth, realize the pn homogenous junction and improve the photoelectric conversion efficiency has become the focus of the study of Cu_2O.The content of this paper is to prepare and doped Cu_2O thin films, and study the photoelectric properties of the films.In this paper, pure phase Cu_2O thin films were prepared by reactive DC magnetron sputtering and doped with Zn and in elements, and F-doped Cu_2O thin films were prepared by thermal diffusion method.The optical and electrical properties of undoped Cu _ 2O _ 2 Zn and in co-doped Cu _ s _ 2O _ 2 and F-doped Cu_2O were investigated.The main work is as follows: firstly, the preparation conditions of pure phase Cu_2O are investigated.Pure phase Cu_2O thin films were prepared by adjusting substrate temperature, sputtering pressure, sputtering power and the flow ratio of O2 to ar. It was found that the substrate temperature was 400 鈩，

本文編號：1731795