本文選題：激光器　切入點：半導體激光器　出處：《發(fā)光學報》2016年04期

【摘要】：為研究熱容型大功率半導體激光器在低環(huán)境溫度、高瞬時功率、長工作間歇時間條件下的應用,建立三維瞬態(tài)熱傳導模型,通過有限元法計算得出熱沉三維尺寸對半導體激光器瞬態(tài)熱特性的影響。選取尺寸為26.6 mm×11.5 mm×4 mm的熱沉進行熱容型半導體激光器的封裝測試,獲得其在-20℃和-30℃環(huán)境溫度下連續(xù)工作3.5 s過程中有源區(qū)溫度隨時間的變化曲線,并與數(shù)值計算的結果進行對比。結果表明,兩者在誤差范圍內能夠很好地吻合。
[Abstract]:In order to study the application of high power semiconductor laser with heat capacity in low ambient temperature, high instantaneous power and long intermittent time, a three-dimensional transient heat conduction model was established.The effect of three dimensional heat sink on transient thermal characteristics of semiconductor laser is calculated by finite element method.The heat sink of 26.6 mm 脳 11.5 mm 脳 4 mm is selected to test the package of the heat capacitive semiconductor laser. The curves of the source temperature with time during the 3.5 s continuous operation at -20 鈩，

本文編號：1707883