發(fā)布時間：2018-04-02 11:39

  本文選題：半導體材料　切入點：輻射效應　出處：《半導體技術》2017年01期

【摘要】：在輻射環(huán)境中,電子系統(tǒng)常用的半導體器件及電路會出現不同程度的性能退化,甚至發(fā)生失效。其根本原因來源于輻射致組成半導體器件的材料內部缺陷的產生和積累。表征和分析輻射致材料內部缺陷的種類、濃度、分布等信息,是半導體材料輻射效應研究的重要內容。從輻射致缺陷微觀形貌、結構特征,及其引起的宏觀電效應三方面,歸納總結了幾種重要的半導體材料輻射效應的表征和分析方法,分析了每種方法的優(yōu)缺點及適用范圍,并指出半導體材料輻射效應表征與分析技術發(fā)展的方向,可為電子器件、半導體材料輻射效應領域的研究人員提供參考。
[Abstract]:In radiation environments, semiconductor devices and circuits commonly used in electronic systems exhibit varying degrees of performance degradation. The root cause of the failure is the generation and accumulation of internal defects in the materials which are composed of semiconductor devices caused by radiation, and the characterization and analysis of the types, concentrations and distributions of internal defects caused by radiation. It is an important content in the study of radiation effect of semiconductor materials. In this paper, several important methods of characterization and analysis of radiation effects of semiconductor materials are summarized from three aspects: microscopic morphology, structural characteristics and macroscopic electric effects of radiation induced defects. The advantages and disadvantages of each method and its application scope are analyzed, and the development direction of radiation effect characterization and analysis technology of semiconductor materials is pointed out, which can be used as a reference for researchers in the field of electronic devices and semiconductor material radiation effects.
【作者單位】： 中國工程物理研究院核物理與化學研究所;
【基金】：中國工程物理研究院核物理與化學研究所科技創(chuàng)新基金資助項目(2015CX03)
【分類號】：TN304
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本文編號：1700264