本文選題：SiGe　切入點(diǎn)：異質(zhì)結(jié)雙極晶體管　出處：《固體電子學(xué)研究與進(jìn)展》2017年01期

【摘要】：幅相多功能芯片是相控陣?yán)走_(dá)的關(guān)鍵部件。為了降低前端收發(fā)組件的尺寸和成本,本文采用0.13μm SiGe BiCMOS工藝設(shè)計(jì)了一款Ku波段幅相多功能芯片,單片集成了接收通道和發(fā)射通道,芯片面積2.5 mm×4.5mm。研制的多功能芯片的接收通道含前端低噪聲放大器、六位數(shù)控衰減器、驅(qū)動(dòng)放大器、單刀雙擲開關(guān)、六位數(shù)控移相器;發(fā)射通道含六位數(shù)控移相器、單刀雙擲開關(guān)、驅(qū)動(dòng)放大器、中功率放大器。此外,為了進(jìn)一步提高芯片的集成度,采用片上集成的電源管理單元和數(shù)字邏輯單元實(shí)現(xiàn)電源電壓變換、衰減器和移相器的邏輯控制以及收發(fā)通道切換等功能。實(shí)測(cè)結(jié)果表明:在f1~f2(1GHz帶寬)頻帶內(nèi),實(shí)現(xiàn)了發(fā)射增益17dB,發(fā)射功率(Psat)21.7dBm;接收增益-3dB,接收輸入功率(P-1)-8.5dBm,接收噪聲系數(shù)6.5dB;5.625°移相步進(jìn),移相精度(RMS)4.5°;0.5dB衰減步進(jìn),衰減精度(0.3dB+7%AS)。
[Abstract]:The amplitude-phase multifunctional chip is the key component of phased array radar. In order to reduce the size and cost of the front-end transceiver module, a Ku-band amplitude-phase multifunctional chip is designed by using 0.13 渭 m SiGe BiCMOS technology. The single chip integrates the receiving channel and the transmitting channel. The area of the chip is 2.5 mm 脳 4.5 mm. The receiving channel of the multifunctional chip includes a front-end low-noise amplifier, a six-bit numerical control attenuator, a driving amplifier, a single-pole double-throw switch, a six-bit digital control phase shifter, and a transmitting channel with a six-bit digital controlled phase shifter. Single pole double throw switch, drive amplifier, medium power amplifier. In addition, in order to further improve the integration of the chip, the integrated power supply management unit and digital logic unit are used to realize the voltage conversion of power supply. The logic control of attenuators and phase shifters, and the switching of transceiver channels, etc. The measured results show that in the f1~f2(1GHz bandwidth, the transmission gain is 17dB, the transmission power is Psat-21.7 dBm, the receiving gain is -3dB, the receiving input power is P-1- 8.5dBmand the noise coefficient is 6.5dB5.625 擄phase-shift step. The phase shift accuracy is 4.5 擄/ 0.5 dB and the attenuation accuracy is 0.3dB / 7ASA.
【作者單位】： 南京電子器件研究所;
【分類號(hào)】：TN958.92;TN432
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本文編號(hào)：1684237