發(fā)布時(shí)間：2018-03-25 08:02

  本文選題：電磁兼容　切入點(diǎn)：電磁敏感度　出處：《強(qiáng)激光與粒子束》2017年05期

【摘要】：模數(shù)轉(zhuǎn)換器(ADC)在測(cè)控系統(tǒng)中應(yīng)用廣泛,針對(duì)嵌入式ADC復(fù)雜環(huán)境下的電磁敏感性問(wèn)題,通過(guò)理論分析和實(shí)驗(yàn)測(cè)量研究了環(huán)境溫度對(duì)其電磁敏感度的影響。結(jié)合ADC結(jié)構(gòu)與特性,分析了射頻信號(hào)對(duì)ADC的干擾機(jī)制,指出了環(huán)境溫度對(duì)干擾信號(hào)作用下的金屬氧化物半導(dǎo)體(MOS)漏電流的影響。在不同溫度下,測(cè)量、分析了電磁干擾下各部分電路參數(shù)的變化情況。并在10 MHz~1 GHz頻率范圍、-10~80℃溫度范圍內(nèi)測(cè)量了ADC電磁敏感度的溫度效應(yīng)。結(jié)果表明,變化的環(huán)境溫度會(huì)通過(guò)影響MOS晶體管的遷移率,改變其在電磁干擾下的響應(yīng),造成ADC電磁敏感度隨環(huán)境溫度變化發(fā)生顯著漂移。
[Abstract]:ADC is widely used in the measurement and control system. Aiming at the electromagnetic sensitivity of embedded ADC in complex environment, the influence of ambient temperature on its electromagnetic sensitivity is studied by theoretical analysis and experimental measurement, combining with the structure and characteristics of ADC. The interference mechanism of RF signal to ADC is analyzed, and the effect of ambient temperature on leakage current of metal oxide semiconductor MOSs under interference signal is pointed out. The variation of circuit parameters under electromagnetic interference is analyzed, and the temperature effect of electromagnetic sensitivity of ADC is measured in the temperature range of 10 MHz~1 GHz frequency range of -1080 鈩，

本文編號(hào)：1662232