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硅襯底CMP過程中拋光霧的控制

發(fā)布時間:2018-03-18 14:27

  本文選題:拋光霧 切入點:化學機械拋光(CMP) 出處:《半導(dǎo)體技術(shù)》2017年12期  論文類型:期刊論文


【摘要】:拋光霧(Haze)是硅晶圓精拋過程中表面質(zhì)量評定的重要參數(shù)之一。主要研究了化學機械拋光(CMP)過程中拋光液磨料質(zhì)量分數(shù)、p H值、FA/O型非離子表面活性劑和混合表面活性劑對Haze值的影響。實驗結(jié)果顯示,磨料質(zhì)量分數(shù)為0.1%是影響Haze值變化的拐點。當磨料質(zhì)量分數(shù)由2%降至0.1%時Haze值下降迅速;當磨料質(zhì)量分數(shù)由0.1%降至0.01%乃至0%時Haze值稍有增加。拋光液p H值約為9.5時Haze值最低,硅片表面質(zhì)量最好,在此基礎(chǔ)上提高或降低p H值都會增加Haze值。隨著非離子表面活性劑體積分數(shù)的增加,Haze值快速下降。滲透劑脂肪醇聚氧乙烯醚(JFC)和FA/O型非離子表面活性劑混合使用比單獨使用其中任何一種更有利于降低Haze值,且當JFC與FA/O的體積比為3∶1時,Haze值降到0.034,滿足了工業(yè)生產(chǎn)的要求。
[Abstract]:Haze is one of the important parameters of surface quality evaluation in the process of polishing silicon wafer. This paper mainly studies the mass fraction of polishing liquid abrasive and the mixed surface activity of FA-P / O type Nonionic surfactants in the process of polishing CMP. The effect of the sex agent on the Haze value. The experimental results show that, The Haze value decreased rapidly when the abrasive mass fraction decreased from 2% to 0.1, and the Haze value increased slightly when the abrasive mass fraction decreased from 0.1% to 0.01% or even 0. The Haze value was the lowest when the polishing fluid pH value was about 9.5. The surface quality of silicon wafer is the best. The value of Haze decreases rapidly with the increase of volume fraction of Nonionic surfactants. The mixture of fatty alcohol polyoxyethylene ether and FA/O Nonionic surfactants can increase the value of Haze. It is better to lower the Haze value than to use any of them alone. When the volume ratio of JFC to FA/O is 3: 1, the value of JFC decreases to 0.034, which meets the requirement of industrial production.
【作者單位】: 河北工業(yè)大學電子信息工程學院;天津市電子材料與器件重點實驗室;
【基金】:國家科技重大專項資助項目(2009ZX02308) 河北省自然科學基金青年基金資助項目(F2015202267) 天津市自然科學基金資助項目(16JCYBJC16100)
【分類號】:TN305.2

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相關(guān)期刊論文 前1條

1 劉玉嶺,劉鈉;硅片拋光霧的分析研究[J];半導(dǎo)體技術(shù);1998年01期



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