本文選題：憶阻器　切入點：振蕩電路　出處：《南京郵電大學》2017年碩士論文　論文類型：學位論文

【摘要】：憶阻器作為一種非易失性存儲器和第四種電路基本無源元件,從它被提出時起就受到人們廣泛關注,并且逐漸成為電路、材料、生物等領域的研究熱點。本論文就憶阻器及憶阻模型基本特性、MLC串并聯(lián)電路、含憶阻器文氏振蕩電路以及憶阻器在神經網絡中的應用展開研究,主要內容包括:研究了憶阻器、憶容器和憶感器等記憶元件特性,介紹了增加型和降低型兩種基本的憶阻模擬電路。具體研究了MLC串并聯(lián)電路,分析其分壓、分流等基本電學特征。進而著重研究了含憶阻模擬器的文氏振蕩電路電路特性,具體分析了該振蕩電路的頻譜變化。研究結果表明,在主頻區(qū),含憶阻器后文氏橋振蕩電路的頻譜峰值幅度會降低,特別在于,主峰頻率兩倍左右的區(qū)域,其頻譜上再次呈現(xiàn)一較小峰值。該現(xiàn)象呈現(xiàn)出的一些頻譜結構的改變可能帶來的影響還有待進一步探究。研究了基于Hodgkin-Huxley方程電路模型的數(shù)學原理以及基本特性,,探究了其中K~+、Na~+離子通道的憶阻器特性。H-H模型可以明顯地反映出膜激發(fā)的正反饋功能,該方程是一個典型的非線性方程,在一定條件下,它存在多重態(tài),這種多重態(tài)的存在及其非線性特性可以成功地解釋可興奮細胞膜激發(fā)現(xiàn)象以及動作電位產生。研究結果表明,通常情況下,K~+、Na~+離子通道具有憶阻器的許多類似特性,可以用相應的憶阻器模型對其進行仿真研究;著重研究了不同激勵信號下,H-H電路模型的跨膜端口的響應特性,發(fā)現(xiàn)端口的跨膜電壓、電流的v-i特性曲線會受到激勵信號的種類、振幅、頻率尤其是電路本身門變量n、m、h的初始值影響。所取得的研究結果對憶阻器在神經網絡領域提供了一定的理論依據。
[Abstract]:As a kind of nonvolatile memory and 4th kinds of basic passive circuit components, amnesia has been paid more and more attention since it was put forward, and has gradually become a kind of circuit and material. In this paper, the basic characteristics of the resistor and the memory model, including the MLC series-parallel circuit, the Wenckler oscillating circuit and the application of the memristor in the neural network, are studied. The main contents are as follows: the main contents of this thesis are as follows: 1. The characteristics of memory components such as memory container and sensor are introduced. Two basic amnesia analog circuits are introduced. The MLC series-parallel circuit is studied in detail, and its partial voltage is analyzed. The basic electrical characteristics, such as shunt and so on, are studied in detail in this paper. The characteristics of the circuit with amnesia simulator are studied, and the spectrum variation of the circuit is analyzed in detail. The results show that, in the main frequency range, The peak amplitude of the frequency spectrum of the Venturi bridge oscillating circuit with amnesia will decrease, especially in the region where the main peak frequency is about twice the frequency. There is again a smaller peak value in the spectrum. The possible effects of some changes in the spectrum structure of the phenomenon need to be further explored. The mathematical principle and basic characteristics of the circuit model based on Hodgkin-Huxley equation are studied. In this paper, the characteristics of the memristor of K ~ + Na ~ + channel. H-H model can obviously reflect the positive feedback function of film excitation. This equation is a typical nonlinear equation. Under certain conditions, it has multiple states. The existence of this multiple state and its nonlinear properties can explain excitable membrane excitation and action potential production successfully. In general, the K ~ + Na ~ + channel has many similar characteristics of the resistive device, which can be simulated with the corresponding resistive model, and the response characteristics of the transmembrane port of the H-H circuit model under different excitation signals are emphatically studied. It is found that the v-i characteristic curve of the transmembrane voltage and current of the port is subject to the type and amplitude of the excitation signal, The frequency, especially the initial value of the gate variable n / m / h of the circuit itself, is affected. The results of the study provide a theoretical basis for the amnesia in the field of neural networks.
【學位授予單位】：南京郵電大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN60

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本文編號：1611300