本文選題：有機(jī)薄膜晶體管　切入點(diǎn)：PVP　出處：《江南大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：絕緣層作為OTFTs的重要組成部分,其性能好壞直接影響著OTFTs的性能,因此,要想獲得性能優(yōu)良的OTFTs器件,好的絕緣層顯得至關(guān)重要。本論文選用PVP作為絕緣材料,其介電常數(shù)較高、絕緣性能好,而且由于溶于有機(jī)溶劑,所以適合溶液法制備。通過(guò)將其制備成PVP薄膜以及MIS結(jié)構(gòu)器件,并借助橢圓偏振光譜儀、半導(dǎo)體參數(shù)分析儀和阻抗分析儀對(duì)其光學(xué)性能和電學(xué)性能進(jìn)行測(cè)試,探討了溶劑蒸汽輔助旋涂和輔助退火對(duì)PVP絕緣膜性能的影響。具體研究?jī)?nèi)容主要包括下列幾個(gè)方面:(1)通過(guò)改變勻膠機(jī)旋轉(zhuǎn)速率以及旋涂時(shí)是否放置PGMEA,研究了旋涂速度和PGMEA蒸汽輔助旋涂對(duì)PVP膜的影響。發(fā)現(xiàn)增大勻膠速率或利用PGMEA進(jìn)行溶劑蒸汽輔助旋涂均能使PVP膜變薄;而且相同厚度條件下,用PGMEA蒸汽輔助旋涂得到的PVP膜做成的MIS結(jié)構(gòu),其單位面積漏電流密度J比未經(jīng)蒸汽輔助旋涂的要小。表明PGMEA溶劑蒸汽輔助旋涂能有效降低PVP膜厚度,并且提高PVP膜電學(xué)性能。(2)利用苯甲醚蒸汽對(duì)PGMEA蒸汽輔助旋涂獲得的PVP膜進(jìn)行輔助退火,通過(guò)改變蒸汽輔助退火時(shí)間研究了它對(duì)PVP膜的影響。經(jīng)橢偏光譜測(cè)試和擬合分析,得到隨著苯甲醚蒸汽輔助退火時(shí)間的增加,PVP膜的總厚度下降,粗糙層厚度先降低后增大,在10min時(shí)達(dá)到最低值;由這種膜構(gòu)成的MIS結(jié)構(gòu)的J-V特性測(cè)試結(jié)果顯示,當(dāng)電場(chǎng)強(qiáng)度取值為2MV/cm時(shí),J由0min時(shí)的1.07×10-6 A/cm2降至10min時(shí)的6.85×10-8 A/cm2,再增至20min時(shí)的2.99×10-7 A/cm2。表明PVP膜經(jīng)適當(dāng)時(shí)間的溶劑蒸汽輔助退火后,能有效降低其表面粗糙度和陷阱密度,從而提高PVP膜性能。(3)通過(guò)改變苯甲醚蒸汽的相對(duì)蒸汽壓,研究了溶劑相對(duì)蒸汽壓對(duì)溶劑蒸汽輔助退火制備PVP膜的影響。經(jīng)橢偏光譜測(cè)試和擬合分析,得到隨著相對(duì)蒸汽壓的增大,PVP膜總厚度(均小于30nm)和粗糙層厚度均降低,薄膜致密性得到改善。由這種膜構(gòu)成的MIS結(jié)構(gòu)的J-V特性測(cè)試結(jié)果顯示,當(dāng)蒸汽壓由0.21增加至0.82時(shí),2MV/cm時(shí)J由2.94×10-7 A/cm2降至4.2×10-8 A/cm2,其漏電機(jī)理在電場(chǎng)強(qiáng)度小于1MV/cm時(shí)為P-F效應(yīng),大于1MV/cm時(shí)為肖特基發(fā)射。而且在相對(duì)蒸汽壓為0.82時(shí)可得到薄膜厚度僅約為20nm、單位面積電容達(dá)到145 n F/cm2的超薄PVP膜。
[Abstract]:As an important part of OTFTs, the performance of insulating layer directly affects the performance of OTFTs. Therefore, it is very important to obtain a good insulating layer in order to obtain a good OTFTs device. In this paper, PVP is chosen as the insulating material. Its dielectric constant is high, its insulation property is good, and because it is soluble in organic solvent, it is suitable to be prepared by solution method. By preparing it into PVP thin film and MIS structure device, and with the help of elliptical polarization spectrometer, The optical and electrical properties were tested by semiconductor parameter analyzer and impedance analyzer. The effects of solvent vapor assisted spin-coating and auxiliary annealing on the properties of PVP insulation film were discussed. The specific research contents include the following aspects: 1) the spin-coating was studied by changing the rotation rate of the rubber leveller and whether or not to place PGMEA at the time of spin-coating. The effect of speed and PGMEA steam assisted spin coating on the PVP film was found. It was found that the PVP film could be thinned by increasing the uniform adhesive rate or using PGMEA as solvent vapor assisted spin coating. Moreover, under the same thickness, the leakage current density J per unit area of the PVP film prepared by PGMEA steam assisted spin coating is smaller than that of the MIS film without steam assisted spin coating. It shows that the PGMEA solvent vapor assisted spin coating can effectively reduce the thickness of PVP film. The electrical properties of PVP films were improved. (2) the PVP films obtained by vapor assisted spin-coating of PGMEA were annealed by phenylene ether vapor. The influence of PVP films on PVP films was studied by changing the time of vapor assisted annealing. The results of ellipsometry spectrum test and fitting analysis were used. The results show that with the increase of the vapor assisted annealing time, the total thickness of the PVP film decreases, the thickness of the rough layer decreases first and then increases, and reaches the lowest value at 10 minutes, and the J-V characteristics of the MIS structure formed by the film are measured. When the electric field intensity is 2 MV / cm, the surface roughness and trap density of PVP film can be reduced effectively by solvent vapor assisted annealing at 20 min, from 1.07 脳 10 -6 A / cm 2 at 0 min to 6.85 脳 10 ~ (-8) A / cm ~ (2) at 10 min, and then to 2.99 脳 10 ~ (-7) A / cm ~ (2) at 20 min. By changing the relative vapor pressure of phenylene ether vapor, the effect of relative solvent vapor pressure on the preparation of PVP film by solvent vapor assisted annealing was studied. With the increase of relative vapor pressure, the total thickness (less than 30 nm) and the thickness of rough layer of PVP film are all decreased, and the densification of the film is improved. The J-V characteristics of the MIS structure formed by this kind of film are measured. When the vapor pressure increases from 0.21 to 0.82, J decreases from 2.94 脳 10 ~ (-7) A / cm ~ (-2) to 4.2 脳 10 ~ (-8) A / cm ~ (2). The leakage mechanism is P-F effect when the electric field intensity is less than 1 MV / cm ~ (-1). Schottky emission is observed when the thickness of the film is greater than 1 MV / cm and the thin PVP film with a thickness of only 20 nm and a capacitance of 145n F / cm 2 can be obtained at the relative vapor pressure of 0.82.
【學(xué)位授予單位】：江南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN321.5

【參考文獻(xiàn)】

相關(guān)期刊論文 前4條

1 王樂(lè);張亞軍;祖帥;鐘傳杰;;雙層復(fù)合柵介質(zhì)膜的制備及電學(xué)性能研究[J];功能材料;2012年07期

2 張亞軍;王樂(lè);祖帥;鐘傳杰;;PMMA分子量對(duì)其電學(xué)特性的影響[J];功能材料與器件學(xué)報(bào);2012年02期

3 冷華星;張玲瓏;滕支剛;鐘傳杰;;溶劑蒸汽輔助制備超薄PVP柵介質(zhì)膜及性能研究[J];功能材料;2014年13期

4 劉翔;鄧振波;王章濤;崔祥彥;賈勇;;有機(jī)薄膜晶體管(OTFT)的研究進(jìn)展[J];現(xiàn)代顯示;2007年12期

，

本文編號(hào)：1584674