本文關鍵詞： 曝光劑量 掩膜 濕法刻蝕 刻蝕速率 喇曼位移　出處：《微納電子技術》2017年06期 　論文類型：期刊論文

【摘要】：以薄膜體聲波諧振器(FBAR)的背腔刻蝕為研究背景,研究了光刻工藝參數設置與光刻圖形轉移效果的關系。分析了紫外曝光劑量大小對光刻圖形面積和邊角曲率的影響,優(yōu)化得到最佳工藝流程,以AZ4620光刻膠為掩膜實現了氮化硅的濕法刻蝕。實驗結果表明,曝光劑量為60 mJ、顯影時間60 s時,曝光圖形化質量最佳;隨著氮化硅刻蝕液溫度的升高,濕法刻蝕速率不斷增大,溫度過高導致光刻膠被破壞而不能起到掩膜作用,60℃時刻蝕速率為109.5 nm/min,得到了邊線規(guī)整、底部平整的微結構�？涛g后表面分子喇曼位移為單晶硅的波峰(519.354 cm~(-1)),證實氮化硅被完全去除,為氮化硅作掩膜的單晶硅濕法刻蝕提供了一種有效途徑。
[Abstract]:Based on the back cavity etching of thin film bulk acoustic resonator FBARs, the relationship between the setting of lithography process parameters and the effect of lithography pattern transfer is studied. The influence of UV exposure dose on the area and edge curvature of lithography pattern is analyzed. The optimum process was obtained by using AZ4620 photoresist as the mask to realize the wet etching of silicon nitride. The experimental results show that when the exposure dose is 60mJ and the development time is 60s, the exposure graphic quality is the best, and with the increase of the temperature of the silicon nitride etching solution, When the wet etching rate is increasing, the etching rate is 109.5 nm / min when the temperature is too high and the photoresist is destroyed and cannot play the role of mask at 60 鈩，

本文編號：1552092